Product Information

SZESD9L3.3ST5G

SZESD9L3.3ST5G electronic component of ON Semiconductor

Datasheet
ESD Suppressors TVS Diodes ESD PROT DIODE UNI SOD923

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 8000
Multiples : 8000

Stock Image

SZESD9L3.3ST5G
ON Semiconductor

8000 : USD 0.1647
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

SZESD9L3.3ST5G
ON Semiconductor

1 : USD 0.7112
10 : USD 0.6105
100 : USD 0.3588
500 : USD 0.2886
1000 : USD 0.234
2500 : USD 0.2075
5000 : USD 0.195
8000 : USD 0.195
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Subcategory
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ESD9L, SESD9L Series ESD Protection Diode UltraLow Capacitance The ESD9L Series is designed to protect voltage sensitive components that require ultralow capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for ESD protection on designs www.onsemi.com where board space is at a premium. Because of its low capacitance, it is suited for use in high frequency designs such as USB 2.0 high speed and antenna line applications. 12 Specification Features: PIN 1. CATHODE 2. ANODE Ultra Low Capacitance 0.5 pF Low Clamping Voltage Small Body Outline Dimensions: 0.039 x 0.024 (1.00 mm x 0.60 mm) 2 Low Body Height: 0.016 (0.4 mm) Standoff Voltage: 3.3 V, 5 V 1 Low Leakage SOD923 CASE 514AB Response Time is Typically < 1.0 ns IEC6100042 Level 4 ESD Protection S and SZ Prefixes for Automotive and Other Applications Requiring MARKING DIAGRAM Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant X M 12 Mechanical Characteristics: X = Specific Device Code CASE: Void-free, transfer-molded, thermosetting plastic M = Date Code Epoxy Meets UL 94 V0 LEAD FINISH: 100% Matte Sn (Tin) *Date Code orientation and/or position may vary depending upon manufacturing location. MOUNTING POSITION: Any QUALIFIED MAX REFLOW TEMPERATURE: 260C Device Meets MSL 1 Requirements ORDERING INFORMATION MAXIMUM RATINGS Device Package Shipping Rating Symbol Value Unit ESD9LxxxST5G SOD923 8000/Tape & Reel (PbFree) IEC 6100042 (ESD) Contact 10 kV Air 15 SESD9LxxxST5G SOD923 8000/Tape & Reel Total Power Dissipation on FR5 Board P 150 mW D (PbFree) (Note 1) T = 25C A SZESD9LxxxST5G SOD923 8000/Tape & Reel Storage Temperature Range T 55 to +150 C stg (PbFree) Junction Temperature Range T 55 to +150 C J For information on tape and reel specifications, Lead Solder Temperature Maximum T 260 C L including part orientation and tape sizes, please (10 Second Duration) refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. DEVICE MARKING INFORMATION See specific marking information in the device marking See Application Note AND8308/D for further description of survivability specs. column of the Electrical Characteristics tables starting on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: November, 2017 Rev. 7 ESD9L/DESD9L, SESD9L Series ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A I Symbol Parameter I F I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM V V V C BR RWM I Maximum Reverse Leakage Current V V R RWM I V R F I T V Breakdown Voltage I BR T I Test Current T I Forward Current F I PP V Forward Voltage I F F P Peak Power Dissipation pk UniDirectional C Max. Capacitance V = 0 and f = 1.0 MHz R *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, V = 1.0 V Max. I = 10 mA for all types) A F F V V (V) I V (V) I ( A) RWM R BR T C (V) V (Note 2) I = 1 A I C (pF) V RWM PP T C Per IEC6100042 Device (Note 4) Marking Max Max Min mA Typ Max Max Device* ESD9L3.3ST5G 6** 3.3 1.0 4.8 1.0 0.5 0.9 9.0 Figures 1 and 2 See Below ESD9L5.0ST5G D 5.0 1.0 5.4 1.0 0.5 0.9 9.8 Figures 1 and 2 See Below * Includes S and SZ-prefix devices where applicable. **Rotated 180. 2. V is measured with a pulse test current I at an ambient temperature of 25C. BR T 3. Surge current waveform per Figure 5. 4. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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