Product Information

SZESD7951ST5G

SZESD7951ST5G electronic component of ON Semiconductor

Datasheet
ON Semiconductor TVS Diodes - Transient Voltage Suppressors SOD-923 EUT SNGL LPS PBF

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 8000
Multiples : 8000

Stock Image

SZESD7951ST5G
ON Semiconductor

8000 : USD 0.152
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

SZESD7951ST5G
ON Semiconductor

1 : USD 0.4278
10 : USD 0.3714
100 : USD 0.2611
500 : USD 0.2093
1000 : USD 0.1771
2500 : USD 0.161
8000 : USD 0.1518
24000 : USD 0.1484
48000 : USD 0.146
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Subcategory
Taric
LoadingGif

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ESD7951S ESD Protection Diode UltraLow Capacitance The ESD7951 is designed to protect voltage sensitive components that require ultralow capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast www.onsemi.com response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, it is suited for use in high frequency designs such as USB 2.0 high speed and 12 antenna line applications. PIN 1. CATHODE Specification Features: 2. ANODE Ultra Low Capacitance 0.5 pF Low Clamping Voltage Small Body Outline Dimensions: 2 0.039 x 0.024 (1.00 mm x 0.60 mm) Low Body Height: 0.016 (0.4 mm) 1 Standoff Voltage: 5 V SOD923 Low Leakage CASE 514AB Response Time is Typically < 1.0 ns IEC6100042 Level 4 ESD Protection MARKING DIAGRAM SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable AA M 12 This is a PbFree Device Mechanical Characteristics: AA = Specific Device Code M = Date Code CASE: Void-free, transfer-molded, thermosetting plastic Epoxy Meets UL 94 V0 LEAD FINISH: 100% Matte Sn (Tin) ORDERING INFORMATION MOUNTING POSITION: Any QUALIFIED MAX REFLOW TEMPERATURE: 260C Device Package Shipping Device Meets MSL 1 Requirements ESD7951ST5G, SOD923 8000 / Tape & SZESD7951ST5G (PbFree) Reel MAXIMUM RATINGS Rating Symbol Value Unit For information on tape and reel specifications, including part orientation and tape sizes, please IEC 6100042 (ESD) Contact 8 kV refer to our Tape and Reel Packaging Specifications Air 15 Brochure, BRD8011/D. Total Power Dissipation on FR5 Board P 150 mW D (Note 1) T = 25C A Storage Temperature Range T 55 to +150 C stg Junction Temperature Range T 55 to +125 C J Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2017 Rev. 5 ESD7951S/DESD7951S ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter I I Maximum Reverse Peak Pulse Current PP I PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM I V V V C BR RWM R V V Breakdown Voltage I I V V V BR T R RWM BR C I T I Test Current T I Forward Current F I V Forward Voltage I PP F F P Peak Power Dissipation pk BiDirectional C Capacitance V = 0 and f = 1.0 MHz R *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A V (V) C V I ( A) V (V) I I = 1 A RWM R BR T PP (V) V (Note 2) (Note 3) I C (pF) V RWM T C Per IEC6100042 Device Max Max Min mA Typ Max Max (Note 4) Marking Device* ESD7951ST5G AA 5.0 1.0 5.4 1.0 0.5 0.9 12.9 Figures 1 and 2 See Below Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Includes SZprefix devices where applicable. 2. V is measured with a pulse test current I at an ambient temperature of 25C. BR T 3. Surge current waveform per Figure 5. 4. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Aptina / ON Semiconductor
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