Product Information

SZESD5B5.0ST5G

SZESD5B5.0ST5G electronic component of ON Semiconductor

Datasheet
ESD Suppressors TVS Diodes SOD-523 EUT SNGL CU PBF

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.599 ea
Line Total: USD 0.6

31017 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
28176 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

SZESD5B5.0ST5G
ON Semiconductor

1 : USD 0.401
10 : USD 0.3168
100 : USD 0.1922
500 : USD 0.178
1000 : USD 0.1199
2500 : USD 0.1175
8000 : USD 0.1032

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Cd - Diode Capacitance
Package / Case
Qualification
Pppm - Peak Pulse Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Vf - Forward Voltage
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ESD5B5.0S, SZESD5B5.0S ESD Protection Diode MicroPackaged Diodes for ESD Protection The ESD5B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size and bidirectional wwwwww..onsemi.comonsemi.com design, it is ideal for use in cellular phones, MP3 players, and portable applications that require audio line protection. Specification Features Low Capacitance 32 pF Low Clamping Voltage Small Body Outline Dimensions: nom 0.063 x 0.032 (1.6x0.8 mm) 2 Low Body Height: nom 0.024 (0.6 mm) 1 Reverse Working (Standoff) Voltage: 5.0 V SOD523 Peak Power up to 50 W 8 x 20 s Pulse CASE 502 Low Leakage Response Time is Typically < 1 ns ESD Rating of Class 3 (> 16 kV) per Human Body Model MARKING DIAGRAM IEC6100042 Level 4 ESD Protection SZ Prefix for Automotive and Other Applications Requiring Unique B5 Site and Control Change Requirements AECQ101 Qualified and 12 PPAP Capable B5 = Specific Device Code This is a PbFree Device M Date Code Mechanical Characteristics = PbFree Package CASE: Void-free, transfer-molded, thermosetting plastic (Note: Microdot may be in either location) Epoxy Meets UL 94 V0 *Date Code orientation and/or position may LEAD FINISH: 100% Matte Sn (Tin) vary depending upon manufacturing location. MOUNTING POSITION: Any QUALIFIED MAX REFLOW TEMPERATURE: 260C Device Meets MSL 1 Requirements ORDERING INFORMATION MAXIMUM RATINGS Device Package Shipping Rating Symbol Value Unit ESD5B5.0ST1G SOD523 3000 / Tape & (PbFree) Reel IEC 6100042 (ESD) Contact 30 kV Air 30 ESD5B5.0ST5G SOD523 8000 / Tape & (PbFree) Reel ESD Voltage Per Human Body Model 16 kV Per Machine Model 400 V SZESD5B5.0ST1G SOD523 3000 / Tape & (PbFree) Reel Peak Power (Figure 1) Per 8 x 20 s Waveform P 50 W PK Peak Power (Figure 2)Per 10 x 1000 s Waveform 10 SZESD5B5.0ST5G SOD523 8000 / Tape & (PbFree) Reel Total Power Dissipation on FR5 Board (Note 1) P 200 mW D T = 25C A For information on tape and reel specifications, including part orientation and tape sizes, please Junction and Storage Temperature Range T , T 55 to C J stg refer to our Tape and Reel Packaging Specifications +150 Brochure, BRD8011/D. Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: August, 2018 Rev. 7 ESD5B5.0ST1/D MESD5B5.0S, SZESD5B5.0S ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V R C PP C BR RWM V I V V V R RWM BR C V Working Peak Reverse Voltage RWM I T I Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T *See Application Note AND8308/D for detailed explanations of BiDirectional datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, V = 0.9 V Max. I = 10 mA for all types) A F F V I ( A) V (V) I C (pF) V = 0 V, RWM BR T R R (V) V (Note 2) I f = 1 MHz V RWM T C Device* Max Max Min Max mA Typ Per IEC6100042 (Note 3) ESD5B5.0ST1G/T5G, 5.0 1.0 5.8 7.8 1.0 32 Figures 1 and 2 SZESD5B5.0ST1G See Below *Other voltages available upon request. 2. V is measured with a pulse test current I at an ambient temperature of 25C. BR T 3. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC 6100042 Negative 8 kV Contact per IEC 6100042 www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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