P6SMB18AT3G is a silicon avalanche diode array designed for overvoltage protection in high-speed communication systems. It has an operating temperature range of -55 °C to 150 °C, a breakdown voltage range of 12 V to 420 V, and a steady state power dissipation of 120 mW. The reverse standoff voltage is 6 V, the surge power is 600 W, the clamping voltage is 10.2 V, the capacitance is 8 pF, and the diode capacitance is 4 pF. The device is RoHS and REACH compliant, and is UL recognized for UL1449 4th Ed certification.