NUS5530MN Integrated Power MOSFET with PNP Low V CE(sat) Switching Transistor This integrated device represents a new level of safety and boardspace reduction by combining the 20 V PChannel FET with a NUS5530MN MAXIMUM RATINGS FOR PNP TRANSISTORS (T = 25C) A Rating Symbol Max Unit Collector-Emitter Voltage V 35 Vdc CEO Collector-Base Voltage V 55 Vdc CBO Emitter-Base Voltage V 5.0 Vdc EBO Collector Current Continuous I 2.0 Adc C Collector Current Peak I 7.0 A CM Electrostatic Discharge ESD HBM Class 3 MM Class C THERMAL CHARACTERISTICS FOR P CHANNEL FET Characteristic Symbol Typ Max Unit Maximum JunctiontoAmbient (Note 4) R C/W JA t 5 sec 40 50 Steady State 80 95 Maximum Junction toFoot (Drain) R 15 20 C/W JF Steady State THERMAL CHARACTERISTICS FOR PNP TRANSISTORS Characteristic Symbol Max Unit Total Device Dissipation P (Note 1) 635 mW D T = 25C A Derate above 25C 5.1 mW/C Thermal Resistance, Junction toAmbient 200 C/W R (Note 1) JA Total Device Dissipation P (Note 2) 1.35 W D T = 25C A Derate above 25C 11 mW/C Thermal Resistance, Junction toAmbient R (Note 2) 90 C/W JA Thermal Resistance, Junction toLead 1 R 15 C/W JL Total Device Dissipation (Single Pulse < 10 sec) P 2.75 W Dsingle (Notes 2 & 3) Junction and Storage Temperature Range T , T 55 to +150 C J stg 2 1. FR4 100 mm , 1 oz copper traces. 2 2. FR4 500 mm , 1 oz copper traces. 3. Thermal response.