Product Information

NTGD3148NT1G

NTGD3148NT1G electronic component of ON Semiconductor

Datasheet
MOSFET NFET 20V 3A 70MOHM TSOP6

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.189 ea
Line Total: USD 567

5820 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
5820 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 3000
Multiples : 3000

Stock Image

NTGD3148NT1G
ON Semiconductor

3000 : USD 0.189
9000 : USD 0.1852

133860 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 3000
Multiples : 3000

Stock Image

NTGD3148NT1G
ON Semiconductor

3000 : USD 0.2673
33000 : USD 0.262

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif

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NTGD3148N MOSFET Power, Dual, N-Channel, TSOP-6 20 V, 3.5 A Features NTGD3148N MOSFET ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 12.5 (BR)DSS J I = 250 A, Ref to 25C mV/C D Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 DSS V = 0 V, J GS A V = 16 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 12 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 0.5 1.5 V GS(TH) GS DS D Gate Threshold Temperature Coefficient V /T 3.28 mV/C GS(TH) J DraintoSource On Resistance R V = 4.5 V I = 3.5 A 41.7 70 DS(on) GS D m V = 2.5 V I = 2.8 A 58 100 GS D Forward Transconductance g V = 5.0 V, I = 3.5 A 6.2 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 300 ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 73 pF OSS V = 10 V DS Reverse Transfer Capacitance C 44 RSS Total Gate Charge Q 3.8 G(TOT) Threshold Gate Charge Q 0.3 G(TH) V = 4.5 V, V = 10 V, GS DS nC I = 3.5 A D GatetoSource Charge Q 0.7 GS GatetoDrain Charge Q 1.1 GD Gate Resistance RG 2.8 SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 7.4 d(ON) Rise Time t 11.2 r V = 4.5 V, V = 10 V, GS DS ns I = 3.5 A, R = 3.0 D G TurnOff Delay Time t 12.8 d(OFF) Fall Time t 1.6 f DRAINTOSOURCE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.71 SD V = 0 V J GS V I = 0.8 A D T = 125C 0.57 J Reverse Recovery Time t 9.0 RR Charge Time T 5.0 ns a V = 0 V, d /d = 100 A/ s, GS IS t I = 0.8 A Discharge Time T S 4.0 b Reverse Recovery Time Q 2.5 nC RR 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device Package Shipping NTGD3148NT1G TSOP6 3000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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