X-On Electronics has gained recognition as a prominent supplier of NTD4909NT4G mosfet across the USA, India, Europe, Australia, and various other global locations. NTD4909NT4G mosfet are a product manufactured by ON Semiconductor. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

NTD4909NT4G

NTD4909NT4G electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.NTD4909NT4G
Manufacturer: ON Semiconductor
Category:MOSFET
Description: MOSFET NFET DPAK 30V 41A 8.0 mOhm
Datasheet: NTD4909NT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
0 - WHS 1

MOQ : 2500
Multiples : 2500
2500 : USD 0.2566
5000 : USD 0.2372
10000 : USD 0.2293
25000 : USD 0.2177
50000 : USD 0.2121
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MOQ : 2500
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2500 : USD 0.2642
5000 : USD 0.2386
12500 : USD 0.2301
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MOQ : 1
Multiples : 1
1 : USD 0.7132
10 : USD 0.6118
25 : USD 0.571
100 : USD 0.4241
500 : USD 0.3312
1000 : USD 0.2692
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Multiples : 1
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MOQ : 1259
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1259 : USD 0.2589
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MOQ : 1
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1 : USD 1.8358
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100 : USD 0.4524
500 : USD 0.3844
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2500 : USD 0.3075
5000 : USD 0.2986
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MOQ : 105
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105 : USD 0.1972
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MOQ : 37
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MOQ : 37
Multiples : 1
37 : USD 0.3256
100 : USD 0.2661
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MOQ : 5000
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5000 : USD 0.2736
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MOQ : 2500
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2500 : USD 0.2268
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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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We proudly offer the NTD4909NT4G MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the NTD4909NT4G MOSFET.

NTD4909N MOSFET Power, Single, N-Channel, DPAK/IPAK 30 V, 41 A Features Low R to Minimize Conduction Losses NTD4909N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 5.1 C/W JC JunctiontoTAB (Drain) R 4.3 JC TAB JunctiontoAmbient Steady State (Note 3) R 58.2 JA JunctiontoAmbient Steady State (Note 4) R 110 JA 3. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu. 4. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 15 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS V = 0 V, J GS V = 24 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.0 1.7 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.0 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 6.5 8.0 m DS(on) GS D I = 15 A 6.5 D V = 4.5 V I = 30 A 9.5 12 GS D I = 15 A 9.5 D Forward Transconductance gFS V = 1.5 V, I = 30 A 52 S DS D CHARGES AND CAPACITANCES Input Capacitance C 1314 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 487 oss V = 15 V DS Reverse Transfer Capacitance C 17.4 rss nC Total Gate Charge Q 7.6 G(TOT) Threshold Gate Charge Q 2.1 G(TH) V = 4.5 V, V = 15 V, GS DS I = 30 A D GatetoSource Charge Q 4.3 GS GatetoDrain Charge Q 1.3 GD Total Gate Charge Q V = 10 V, V = 15 V, 17.5 nC G(TOT) GS DS I = 30 A D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 11 ns d(on) Rise Time t 21 r V = 4.5 V, V = 15 V, GS DS I = 15 A, R = 3.0 D G TurnOff Delay Time t 17 d(off) Fall Time t 2.7 f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. 7. Assume terminal length of 110 mils.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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