Product Information

NTD4302T4G

NTD4302T4G electronic component of ON Semiconductor

Datasheet
ON Semiconductor MOSFET 30V 68A N-Channel

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 1.2158 ea
Line Total: USD 12.16

19 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
19 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

NTD4302T4G
ON Semiconductor

1 : USD 1.2158
10 : USD 1.2158

19 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 10
Multiples : 1

Stock Image

NTD4302T4G
ON Semiconductor

10 : USD 1.2158

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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NTD4302 MOSFET Power, N-Channel, DPAK/IPAK 68 A, 30 V Features NTD4302 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage V Vdc (BR)DSS (V = 0 Vdc, I = 250 A) 30 GS D Positive Temperature Coefficient 25 mV/C Zero Gate Voltage Drain Current I Adc DSS (V = 0 Vdc, V = 30 Vdc, T = 25C) 1.0 GS DS J (V = 0 Vdc, V = 30 Vdc, T = 125C) 10 GS DS J GateBody Leakage Current (V = 20 Vdc, V = 0 Vdc) I 100 nAdc GS DS GSS ON CHARACTERISTICS Gate Threshold Voltage V Vdc GS(th) 1.0 1.9 3.0 (V = V , I = 250 Adc) DS GS D 3.8 Negative Temperature Coefficient Static DrainSource OnState Resistance R DS(on) (V = 10 Vdc, I = 20 Adc) 0.0078 0.010 GS D (V = 10 Vdc, I = 10 Adc) 0.0078 0.010 GS D (V = 4.5 Vdc, I = 5.0 Adc) 0.010 0.013 GS D Forward Transconductance (V = 15 Vdc, I = 10 Adc) gFS 20 Mhos DS D DYNAMIC CHARACTERISTICS Input Capacitance C 2050 2400 pF iss (V = 24 Vdc, V = 0 Vdc, DS GS Output Capacitance C 640 800 oss f = 1.0 MHz) Reverse Transfer Capacitance C 225 310 rss SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 11 20 ns d(on) (V = 25 Vdc, I = 1.0 Adc, DD D Rise Time t 15 25 r V = 10 Vdc, GS TurnOff Delay Time t 85 130 d(off) R = 6.0 ) G Fall Time t 55 90 f TurnOn Delay Time t 11 20 ns d(on) (V = 25 Vdc, I = 1.0 Adc, DD D Rise Time t 13 20 r V = 10 Vdc, GS TurnOff Delay Time t 55 90 d(off) R = 2.5 ) G Fall Time t 40 75 f TurnOn Delay Time t 15 ns d(on) (V = 24 Vdc, I = 20 Adc, DD D Rise Time t 25 r V = 10 Vdc, GS TurnOff Delay Time t 40 d(off) R = 2.5 ) G Fall Time t 58 f Gate Charge Q 55 80 nC T (V = 24 Vdc, I = 2.0 Adc, DS D Q (Q1) 5.5 gs V = 10 Vdc) GS Q (Q2) 15 gd BODYDRAIN DIODE RATINGS (Note 5) Diode Forward OnVoltage V Vdc SD (I = 2.3 Adc, V = 0 Vdc) 0.75 1.0 S GS (I = 20 Adc, V = 0 Vdc) 0.90 S GS (I = 2.3 Adc, V = 0 Vdc, T = 125C) 0.65 S GS J Reverse Recovery Time t 39 65 ns rr (I = 2.3 Adc, V = 0 Vdc, S GS t 20 a dI /dt = 100 A/ s) S t 19 b Reverse Recovery Stored Charge Q 0.043 C rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Indicates Pulse Test: Pulse Width = 300 sec max, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperature.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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