X-On Electronics has gained recognition as a prominent supplier of NTB75N06T4G mosfet across the USA, India, Europe, Australia, and various other global locations. NTB75N06T4G mosfet are a product manufactured by ON Semiconductor. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

NTB75N06T4G ON Semiconductor

NTB75N06T4G electronic component of ON Semiconductor
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Part No.NTB75N06T4G
Manufacturer: ON Semiconductor
Category:MOSFET
Description: Trans MOSFET N-CH 60V 75A 3-Pin(2+Tab) D2PAK T/R
Datasheet: NTB75N06T4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2: USD 7.5064 ea
Line Total: USD 15.01

Availability - 0
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 2
Multiples : 1
2 : USD 7.5064
25 : USD 5.5066
100 : USD 3.7603

     
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NTP75N06, NTB75N06 Power MOSFET 75 Amps, 60 Volts, NChannel 2 TO220 and D PAK Designed for low voltage, high speed switching applications in NTP75N06, NTB75N06 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 1) V Vdc (BR)DSS (V = 0 Vdc, I = 250 Adc) 60 71 GS D Temperature Coefficient (Positive) 73 mV/C Zero Gate Voltage Drain Current I Adc DSS (V = 60 Vdc, V = 0 Vdc) 10 DS GS (V = 60 Vdc, V = 0 Vdc, T = 150C) 100 DS GS J GateBody Leakage Current (V = 20 Vdc, V = 0 Vdc) I 100 nAdc GS DS GSS ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (Note 1) V Vdc GS(th) (V = V , I = 250 Adc) 2.0 2.8 4.0 DS GS D Threshold Temperature Coefficient (Negative) 8.0 mV/C Static DraintoSource OnResistance (Note 1) R m DS(on) (V = 10 Vdc, I = 37.5 Adc) 8.2 9.5 GS D Static DraintoSource OnVoltage (Note 1) V Vdc DS(on) (V = 10 Vdc, I = 75 Adc) 0.72 0.86 GS D (V = 10 Vdc, I = 37.5 Adc, T = 150C) 0.63 GS D J Forward Transconductance (Note 1) (V = 15 Vdc, I = 37.5 Adc) g 40.2 mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 3220 4510 pF iss (V(V = 25 Vdc, V25 Vd V = 0 Vdc,0Vd DS GS Output Capacitance C 1020 1430 oss ff = 1.0 MHz = 1.0 MHz)) Transfer Capacitance C 234 330 rss SWITCHING CHARACTERISTICS (Note 2) TurnOn Delay Time t 16 25 ns d(on) Rise Time t 112 155 r (V(V = 30 Vdc, I 30 Vdc, I = 75 Adc,75 Adc, DDDD DD V = 10 Vdc, R = 9.1 ) (Note 1) GS G TurnOff Delay Time t 90 125 d(off) Fall Time t 100 140 f Gate Charge Q 92 130 nC T (V(V = 48 Vdc, I48 Vd I = 75 Adc,75 Ad DS D Q 14 1 VV = 10 Vdc= 10 Vdc)) ((NoteNote 1 1)) GSGS Q 44 2 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (I = 75 Adc, V = 0 Vdc) (Note 1) V 1.0 1.1 Vdc S GS SD (I = 75 Adc, V = 0 Vdc, T = 150C) 0.9 S GS J Reverse Recovery Time t 77 ns rr (I(I = 75 Adc, V75 Ad V = 0 Vdc,0Vd S GS t 49 a dIdI /dt/dt = 100 A/ = 100 A/ ss)) (Note(Note 1 1)) SS t 28 b Reverse Recovery Stored Charge Q 0.16 C RR 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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