Product Information

NSVJ3557SA3T1G

Hot NSVJ3557SA3T1G electronic component of ON Semiconductor

Datasheet
SC-59-3 JFETs ROHS
Low-Reverse-Recovery Fast-Recovery Diode in SMA package with high efficiency current rectification.

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2042 ea
Line Total: USD 0.2

2 - Global Stock
Ships to you between
Mon. 06 May to Fri. 10 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1

Stock Image

NSVJ3557SA3T1G
ON Semiconductor

1 : USD 0.2042

27250 - Global Stock


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

NSVJ3557SA3T1G
ON Semiconductor

1 : USD 0.5635
10 : USD 0.5463
100 : USD 0.3933
500 : USD 0.3071
1000 : USD 0.2495
3000 : USD 0.2139

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Configuration
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Brand
Factory Pack Quantity :
Type
Drain-Source Current At Vgs 0
Forward Transconductance - Min
Gate-Source Cutoff Voltage
Cnhts
Hts Code
Maximum Drain Gate Voltage
Mxhts
Taric
LoadingGif

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NSVJ3557SA3T1G is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) manufactured by ON Semiconductor. It has a drain-source voltage of 30 volts and a drain current of 3.9 amps. It also features a low on-resistance of 0.019 Ohms and an extremely fast switching speed of trd(on) @ 2.5A = 6.7nsec. It is suitable for battery powered applications and other low-voltage circuitry.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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