NSS40300MDR2G, NSV40300MDR2G Dual Matched 40 V, 6.0 A, Low V PNP Transistor CE(sat) 2 These transistors are part of the ON Semiconductor e PowerEdge NSS40300MDR2G, NSV40300MDR2G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit SINGLE HEATED Total Device Dissipation (Note 1) P D T = 25C 576 mW A Derate above 25C 4.6 mW/C Thermal Resistance R C/W JA JunctiontoAmbient (Note 1) 217 Total Device Dissipation (Note 2) P D T = 25C 676 mW A Derate above 25C 5.4 mW/C Thermal Resistance R C/W JA JunctiontoAmbient (Note 2) 185 DUAL HEATED (Note 3) Total Device Dissipation (Note 1) P D T = 25C 653 mW A Derate above 25C 5.2 mW/C Thermal Resistance R C/W JA JunctiontoAmbient (Note 1) 191 Total Device Dissipation (Note 2) P D T = 25C 783 mW A Derate above 25C 6.3 mW/C Thermal Resistance R C/W JA JunctiontoAmbient (Note 2) 160 Junction and Storage Temperature Range T , T 55 to +150 C J stg 2 1. FR4 10 mm , 1 oz. copper traces, still air. 2 2. FR4 100 mm , 1 oz. copper traces, still air. 3. Dual heated values assume total power is the sum of two equally powered devices.