Product Information

NSBA114TDXV6T1G

NSBA114TDXV6T1G electronic component of ON Semiconductor

Datasheet
Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6765 ea
Line Total: USD 0.68

3879 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3879 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

NSBA114TDXV6T1G
ON Semiconductor

1 : USD 0.4865
10 : USD 0.3702
100 : USD 0.21
1000 : USD 0.1056
4000 : USD 0.0926
8000 : USD 0.0736
24000 : USD 0.0688
48000 : USD 0.0605
100000 : USD 0.0593

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Height
Length
Width
Brand
Pd - Power Dissipation
Product Type
Factory Pack Quantity :
Subcategory
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MUN5115DW1, NSBA114TDXV6, NSBA114TDP6 Dual PNP Bias Resistor Transistors www.onsemi.com R1 = 10 k , R2 = k PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R device and its external resistor bias network. The Bias Resistor 1 R 2 Transistor (BRT) contains a single transistor with a monolithic bias Q 1 network consisting of two resistors a series base resistor and a base-emitter resistor. The BRT eliminates these individual Q 2 components by integrating them into a single device. The use of a BRT R 2 R can reduce both system cost and board space. 1 Features (4) (5) (6) Simplifies Circuit Design Reduces Board Space MARKING DIAGRAMS Reduces Component Count 6 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT363 OE M AEC-Q101 Qualified and PPAP Capable CASE 419B These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant MAXIMUM RATINGS SOT563 0E M (T = 25C, common for Q and Q , unless otherwise noted) A 1 2 CASE 463A 1 Rating Symbol Max Unit Collector-Base Voltage V 50 Vdc CBO Collector-Emitter Voltage V 50 Vdc CEO M SOT963 Collector Current Continuous I 100 mAdc C CASE 527AD 1 Input Forward Voltage V 40 Vdc IN(fwd) Input Reverse Voltage V 5 Vdc IN(rev) 0E/T = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Date Code* device. If any of these limits are exceeded, device functionality should not be = Pb-Free Package assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) ORDERING INFORMATION *Date Code orientation may vary depending up- on manufacturing location. Device Package Shipping MUN5115DW1T1G, SOT363 3,000/Tape & Reel SMUN5115DW1T1G NSBA114TDXV6T1G SOT563 4,000/Tape & Reel NSBA114TDXV6T5G SOT563 8,000/Tape & Reel NSBA114TDP6T5G SOT963 8,000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: June, 2017 Rev. 1 DTA114TD/D TMUN5115DW1, NSBA114TDXV6, NSBA114TDP6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MUN5115DW1 (SOT 363) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 1) 187 mW A (Note 2) 256 Derate above 25C (Note 1) 1.5 mW/C (Note 2) 2.0 Thermal Resistance, (Note 1) R 670 C/W JA Junction to Ambient (Note 2) 490 MUN5115DW1 (SOT363) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 1) 250 mW A (Note 2) 385 Derate above 25C (Note 1) 2.0 mW/C (Note 2) 3.0 Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 493 (Note 2) 325 Thermal Resistance, R C/W JL Junction to Lead (Note 1) 188 (Note 2) 208 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBA114TDXV6 (SOT563) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 1) 357 mW A Derate above 25C (Note 1) 2.9 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 350 NSBA114TDXV6 (SOT563) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 1) 500 mW A Derate above 25C (Note 1) 4.0 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 250 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBA114TDP6 (SOT963) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 4) 231 MW A (Note 5) 269 Derate above 25C (Note 4) 1.9 mW/C (Note 5) 2.2 Thermal Resistance, R C/W JA Junction to Ambient (Note 4) 540 (Note 5) 464 NSBA114TDP6 (SOT963) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 4) 339 MW A (Note 5) 408 Derate above 25C (Note 4) 2.7 mW/C (Note 5) 3.3 Thermal Resistance, R C/W JA Junction to Ambient (Note 4) 369 (Note 5) 306 Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. FR4 Minimum Pad. 2. FR4 1.0 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. 2 4. FR4 100 mm , 1 oz. copper traces, still air. 2 5. FR4 500 mm , 1 oz. copper traces, still air. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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