Product Information

NRVBS330T3G

NRVBS330T3G electronic component of ON Semiconductor

Datasheet
Diode Schottky 30V 4A Automotive 2-Pin SMC T/R

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 2500
Multiples : 2500

Stock Image

NRVBS330T3G
ON Semiconductor

2500 : USD 0.193
5000 : USD 0.1834
10000 : USD 0.1816
25000 : USD 0.1804
N/A

Obsolete
0 - WHS 2


Multiples : 2500

Stock Image

NRVBS330T3G
ON Semiconductor

N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

NRVBS330T3G
ON Semiconductor

1 : USD 0.7988
10 : USD 0.6867
100 : USD 0.3468
500 : USD 0.2976
1000 : USD 0.2649
2500 : USD 0.2219
5000 : USD 0.2195
10000 : USD 0.2073
25000 : USD 0.2013
N/A

Obsolete
0 - WHS 4

MOQ : 2500
Multiples : 2500

Stock Image

NRVBS330T3G
ON Semiconductor

2500 : USD 0.2272
N/A

Obsolete
     
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RoHS - XON
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DATA SHEET www.onsemi.com Surface Mount SCHOTTKY BARRIER RECTIFIERS Schottky Power Rectifier 3.0 AMPERES 20, 30, 40 VOLTS MBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, SBRS8340T3G These devices employ the Schottky Barrier principle in a large area SMC 2LEAD CASE 403AC metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay MARKING DIAGRAM contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount AYWW applications where compact size and weight are critical to the system. B3x Features Small Compact Surface Mountable Package with J-Bend Leads B3x = Device Code Rectangular Package for Automated Handling x = 2, 3 or 4 A = Assembly Location** Highly Stable Oxide Passivated Junction Y = Year Very Low Forward Voltage Drop WW = Work Week (0.5 V Max 3.0 A, T = 25C) = PbFree Package J Excellent Ability to Withstand Reverse Avalanche Energy Transients (Note: Microdot may be in either location) **The Assembly Location code (A) is front side Guard-Ring for Stress Protection optional. In cases where the Assembly Location is stamped in the package, the front side assembly code Device Passes ISO 7637 Pulse 1 may be blank. SBRS8 and NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements ORDERING INFORMATION AECQ101 Qualified and PPAP Capable* Device Package Shipping These Devices are PbFree, Halogen Free/BFR Free and are RoHS MBRS320T3G SMC 2,500 / Compliant (PbFree) Tape & Reel Mechanical Characteristics MBRS330T3G SMC 2,500 / (PbFree) Tape & Reel Case: Epoxy, Molded, Epoxy Meets UL 94 V0 MBRS340T3G SMC 2,500 / Weight: 217 mg (Approximately) (PbFree) Tape & Reel Finish: All External Surfaces Corrosion Resistant and Terminal NRVBS330T3G SMC 2,500 / Leads are Readily Solderable (PbFree) Tape & Reel Lead and Mounting Surface Temperature for Soldering Purposes: SBRS8320T3G* SMC 2,500 / (PbFree) Tape & Reel 260C Max. for 10 Seconds SBRS8340T3G* SMC 2,500 / Polarity: Polarity Band on Plastic Body Indicates Cathode Lead (PbFree) Tape & Reel Device Meets MSL 1 Requirements For information on tape and reel specifications, ESD Ratings: including part orientation and tape sizes, please Machine Model = C (> 400 V) refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Human Body Model = 3B (> 8000 V) Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: August, 2021 Rev. 15 MBRS340T3/DMBRS320T3G, SBRS8320T3G, MBRS330T3G, NRVBS330T3G, MBRS340T3G, SBRS8340T3G MAXIMUM RATINGS MBRS320T3G, MBRS330T3G, MBRS340T3G, SBRS8320T3G NRVBRS330T3G SBRS8340T3G Rating Symbol Unit Peak Repetitive Reverse Voltage V 20 30 40 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I 3.0 T = 110C A F(AV) L 4.0 T = 105C L Nonrepetitive Peak Surge Current I A FSM (Surge applied at rated load conditions halfwave, 80 single phase, 60 Hz) Operating Junction Temperature T 65 to +150 C J ISO 7637 Pulse 1 Pulses (100 V, 10 ) 5000 ESD Ratings: V Machine Model = C > 400 Human Body Model = 3B > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Thermal Resistance, JunctiontoLead R 11 C/W JL ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1) V V F (i = 3.0 A, T = 25C) 0.50 F J Maximum Instantaneous Reverse Current (Note 1) i mA R (Rated dc Voltage, T = 25C) 2.0 J (Rated dc Voltage, T = 100C) 20 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. TYPICAL ELECTRICAL CHARACTERISTICS 10 10 T = 100C T = 100C T = 125C T = 125C J J J J 1 1 T = 25C T = 25C J J T = 40C T = 40C J J T = 65C T = 65C J J 0.1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 V , INSTANTANEOUS FORWARD VOLTAGE (V) V , MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V) F F Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage www.onsemi.com 2 i , INSTANTANEOUS FORWARD F CURRENT (AMPS) i , INSTANTANEOUS FORWARD F CURRENT (AMPS)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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