Ignition IGBT Surface Mount > 400v > NGB18N40ACLB 2 Pb NGB18N40ACLB - 18 A, 400 V, N-Channel Ignition IGBT, D PAK Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and OverVoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features Ideal for CoilonPlug Applications DPAK Package Offers Smaller Footprint for Increased Board Space GateEmitter ESD Protection Temperature Compensated GateCollector Voltage 18 Amps, 400 Volts Clamp Limits Stress Applied to Load V (on) 2.0 V CE Integrated ESD Diode Protection I = 10 A, V 4.5 V C GE New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area Maximum Ratings (TJ = 25C unless otherwise noted) Low Threshold Voltage Interfaces Power Loads to Logic or Microprocessor Devices Rating Symbol Value Unit Low Saturation Voltage CollectorEmitter Voltage V 430 V CES DC High Pulsed Current Capability Optional Gate Resistor (R ) and GateEmitter G Resistor (R ) CollectorGate Voltage V 430 V GE CER DC Emitter Ballasting for ShortCircuit Capability These are PbFree Devices GateEmitter Voltage V 18 V GE DC Functional Diagram 18 A Collector CurrentContinuous DC I C TC = 25C Pulsed 50 A AC ESD (Human Body Model) R = 1500 ESD 8.0 kV , C = 100 pF ESD (Machine Model) R = 0 , C = ESD 800 V 200 pF 115 Total Power Dissipation TC = 25C Watts PD Derate above 25C W/C 0.77 Additional Information 55 Operating and Storage T , T to C J stg Temperature Range +175 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage Samples Datasheet Resources may occur and reliability may be affected. 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/25/18Ignition IGBT Surface Mount > 400v > NGB18N40ACLB Unclamped CollectorToEmitter Avalanche Characteristics (55 T 150C) J Rating Symbol Value Unit Single Pulse CollectortoEmitter Avalanche Energy V = 50 V, V = 5.0 V, P I = 21.1 A, L = 1.8 mH, Starting T = 25C 400 CC GE k L J E mJ AS V = 50 V, V = 5.0 V, P I = 18.3 A, L = 1.8 mH, Starting T = 125C 300 CC GE k L J Reverse Avalanche Energy V = 100 V, V = 20 V, P I = 25.8 A, L = 6.0 mH, Starting T = 25C E 2000 mJ CC GE k L J AS (R) Maximum Short-Circuit Times (55 T 150C) J Rating Symbol Value Unit Short Circuit Withstand Time 1 750 s t (See Figure 17, 3 Pulses with 10 ms Period) sc1 Short Circuit Withstand Time 2 5.0 ms t (See Figure 18, 3 Pulses with 10 ms Period) sc2 Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction to Case R 1.3 C/W JC 2 Thermal Resistance, Junction to Ambient D PAK (Note 1) R 50 C/W JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for T 275 C 5 seconds L 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 05/25/18