DATA SHEET www.onsemi.com IGBT 50 A, 600 V V = 1.50 V CEsat NGTB50N60L2WG E = 0.6 mJ off This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides C superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features Extremely Efficient Trench with Field Stop Technology G T = 175C Jmax Soft Fast Reverse Recovery Diode E Optimized for High Speed Switching 5 s ShortCircuit Capability These are PbFree Devices Typical Applications Motor Drive Inverters G C Industrial Switching E TO247 Welding CASE 340AM ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit MARKING DIAGRAM Collectoremitter Voltage V 600 V CES Collector Current I A C T = 25C 100 C T = 100C 50 C 50N60L2 Diode Forward Current I A F AYWWG T = 25C 100 C T = 100C 50 C Diode Pulsed Current I 200 A FM T Limited by T Max PULSE J Pulsed Collector Current, T I 200 A pulse CM Limited by T Jmax 50N60L2 = Specific Device Code Shortcircuit Withstand Time t 5 s SC A = Assembly Location V = 15 V, V = 400 V, GE CE Y = Year T +150C J WW = Work Week Gateemitter Voltage V 20 V GE G = PbFree Package V Transient Gateemitter Voltage 30 (T = 5 s, D < 0.10) PULSE ORDERING INFORMATION Power Dissipation P W D T = 25C 500 C Device Package Shipping T = 100C 250 C NGTB50N60L2WG TO247 30 Units / Rail Operating Junction Temperature T 55 to +175 C J (PbFree) Range Storage Temperature Range T 55 to +175 C stg Lead temperature for soldering, 1/8 T 260 C SLD from case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: October, 2021 Rev. 5 NGTB50N60L2W/DNGTB50N60L2WG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.28 C/W JC Thermal resistance junctiontocase, for Diode R 0.62 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 600 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 50 A V 1.30 1.50 1.80 V GE C CEsat V = 15 V, I = 50 A, T = 175C 1.85 GE C J Gateemitter threshold voltage V 4.5 5.5 6.5 V V = V , I = 350 A GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 600 V I 0.1 mA GE CE CES emitter shortcircuited V = 0 V, V = 600 V, T 175C 1.0 4.0 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 100 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 7500 pF ies Output capacitance C 300 V = 20 V, V = 0 V, f = 1 MHz oes CE GE Reverse transfer capacitance C 190 res Gate charge total Q 310 nC g Gate to emitter charge Q 60 V = 480 V, I = 50 A, V = 15 V ge CE C GE Gate to collector charge Q 150 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 110 ns d(on) Rise time t 48 r Turnoff delay time t 270 T = 25C d(off) J V = 400 V, I = 50 A CC C Fall time t 70 f R = 10 g Turnon switching loss E 1.25 mJ V = 0 V/ 15 V on GE Turnoff switching loss E 0.6 off Total switching loss E 1.85 ts Turnon delay time t 115 ns d(on) Rise time t 50 r Turnoff delay time t 280 T = 150C d(off) J V = 400 V, I = 50 A CC C Fall time t 100 f R = 10 g Turnon switching loss E 1.6 mJ V = 0 V/ 15 V on GE Turnoff switching loss E 1.0 off Total switching loss E 2.6 ts DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 50 A V 1.40 1.70 2.50 V GE F F V = 0 V, I = 50 A, T = 175C 2.40 GE F J Reverse recovery time t 67 ns rr T = 25C J Reverse recovery charge Q 0.30 C I = 50 A, V = 200 V F R rr di /dt = 200 A/ s F Reverse recovery current I 7.4 A rrm Reverse recovery time t 143 ns rr T = 175C J Reverse recovery charge I = 50 A, V = 400 V Q 1.40 C rr F R di /dt = 200 A/ s F Reverse recovery current I 15 A rrm Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2