Product Information

NCP3712ASNT3G

NCP3712ASNT3G electronic component of ON Semiconductor

Datasheet
Gate Drivers 200mA High Side Sw With Flexible OVP
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

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0 - WHS 1

MOQ : 10000
Multiples : 10000

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NCP3712ASNT3G
ON Semiconductor

10000 : USD 0.2147
20000 : USD 0.2147
100000 : USD 0.2094
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Output Current
Number of Outputs
Mounting Style
Package / Case
Type
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Pd - Power Dissipation
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Technology
Cnhts
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Mxhts
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Additional Infomation About Product

NCP3712ASN, SZNCP3712ASN Over Voltage Protected High Side Switch This switch is primarily intended to protect loads from transients by isolating the load from the transient energy rather than absorbing it. NCP3712ASN, SZNCP3712ASN MAXIMUM RATINGS (T = 25C unless otherwise noted) (Note 1) J Rating Symbol Value Unit InputtoOutput Voltage V 105 V io Reverse InputtoVz. Voltage V 9.0 V in(rev) Reverse InputtoRboost Voltage V 5.0 V in(rev) Output Load Current Continuous I 300 mA load Enbl Input Current Continuous I 5.0 mA enbl Vz Input Current Continuous I 3.0 mA z Rboost Input Current Continuous I 10 mA boost Junction Temperature T 125 C J Operating Ambient Temperature Range T 40 to +85 C A Storage Temperature Range T 65 to +150 C stg Device Power Dissipation (Minimum Footprint) P 300 mW D Derate Above 25C 2.4 mW/C Latchup Performance: Positive I 200 mA Latchup Negative 200 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This device contains ESD protection and exceeds the following tests: Human Body Model 1500 V per MILSTD883, Method 3015. Machine Model Method 150 V. KEY A+ FB* 1N4004 Enbl V out 1 6 I enbl I 0.01 F 0.027 F 18 V 0500 load V N.C. in R NCP3712 load TYP TYP TYP R opt ASN 2 5 R enbl R V boost Z 1.0 k TYP 3 4 I I boost Z FB* A *FB = MMZ2012 Y601B Figure 2. Typical Applications Circuit for Load Dump Transient Protection 15 120 13.5 V SUPPLY RAIL TYPICAL 100 ENABLE DEVICE OUTPUT INPUT NOT VOLTAGE TRANSIENT INPUT 10 80 LOAD LOAD DEPENDENT DEPENDENT 60 13.5 V 50% EXP DECAY OUTPUT tpLH SUPPLY AMPLITUDE EXP DECAY RAIL 5 40 V V off on 20 0 0 0 5 10 15 20 25 30 35 40 45 50 0 50 100 150 200 250 300 350 TIME ( s) TIME ( s) Figure 3. Enable NOT Switching Waveforms Figure 4. Load Dump Waveforms

HS Compliance

Tariff Desc

8542.39.23 No ..Linear/analogue and peripheral integrated circuits, timers, voltage regulators, A/D and D/A converters, telecommunication and modem integrated circuits, other than board level products Free

Electronic integrated circuits- Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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