Product Information

NCP103BMX180TCG

NCP103BMX180TCG electronic component of ON Semiconductor

Datasheet
LDO Voltage Regulators CMOS LDO REGULATOR 150 mA

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0224 ea
Line Total: USD 0.02

1366 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2293 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

NCP103BMX180TCG
ON Semiconductor

1 : USD 0.2725
10 : USD 0.2691
100 : USD 0.1162
1000 : USD 0.0759
3000 : USD 0.069

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Output Voltage
Output Current
Number of Outputs
Quiescent Current
Input Voltage MIN
Input Voltage MAX
PSRR / Ripple Rejection - Typ
Output Type
Minimum Operating Temperature
Maximum Operating Temperature
Dropout Voltage
Series
Packaging
Product
Type
Brand
Dropout Voltage - Max
Voltage Regulation Accuracy
Line Regulation
Load Regulation
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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DATA SHEET www.onsemi.com Low Dropout Regulator - CMOS 1 UDFN4 150 mA MX SUFFIX CASE 517CU NCP103 MARKING DIAGRAM The NCP103 is 150 mA LDO that provides the engineer with a very stable, accurate voltage with low noise suitable for space constrained, noise sensitive applications. In order to optimize performance for XX M battery operated portable applications, the NCP103 employs the 1 dynamic quiescent current adjustment for very low I consumption at Q XX = Specific Device Code noload. M = Date Code Features Operating Input Voltage Range: 1.7 V to 5.5 V PIN CONNECTION Available in Fixed Voltage Options: 0.9 V to 3.5 V EN IN Contact Factory for Other Voltage Options 34 Very Low Quiescent Current of Typ. 50 A Standby Current Consumption: Typ. 0.1 A Low Dropout: 75 mV Typical at 150 mA 1% Accuracy at Room Temperature High Power Supply Ripple Rejection: 75 dB at 1 kHz 2 1 Thermal Shutdown and Current Limit Protections GND OUT Stable with a 1 F Ceramic Output Capacitor (Bottom View) Available in uDFN 1.0 x 1.0 mm Package These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant ORDERING INFORMATION See detailed ordering, marking and shipping information on Typical Applicaitons page 13 of this data sheet. PDAs, Mobile phones, GPS, Smartphones Wireless Handsets, Wireless LAN, Bluetooth , Zigbee Portable Medical Equipment Other Battery Powered Applications V IN V OUT IN OUT NCP103 C C IN OUT EN 1 F ON GND Ceramic OFF Figure 1. Typical Application Schematic Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2021 Rev. 14 NCP103/DNCP103 IN ENABLE THERMAL EN LOGIC SHUTDOWN BANDGAP MOSFET REFERENCE DRIVER WITH CURRENT LIMIT OUT AUTO LOW POWER MODE ACTIVE DISCHARGE* EN GND *Active output discharge function is present only in NCP103AMXyyyTCG devices. yyy denotes the particular V option. OUT Figure 2. Simplified Schematic Block Diagram PIN FUNCTION DESCRIPTION Pin No. Pin Name Description 1 OUT Regulated output voltage pin. A small ceramic capacitor with minimum value of 1 F is needed from this pin to ground to assure stability. 2 GND Power supply ground. 3 EN Driving EN over 0.9 V turns on the regulator. Driving EN below 0.4 V puts the regulator into shutdown mode. 4 IN Input pin. A small capacitor is needed from this pin to ground to assure stability. EPAD Exposed pad should be connected directly to the GND pin. Soldered to a large ground copper plane allows for effective heat removal. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Input Voltage (Note 1) V 0.3 V to 6 V V IN Output Voltage VOUT 0.3 V to VIN + 0.3 V or 6 V V Enable Input VEN 0.3 V to VIN + 0.3 V or 6 V V Output Short Circuit Duration tSC s Maximum Junction Temperature T 150 C J(MAX) Storage Temperature T 55 to 150 C STG ESD Capability, Human Body Model (Note 2) ESD 2000 V HBM ESD Capability, Machine Model (Note 2) ESD 200 V MM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per EIA/JESD22A114, ESD Machine Model tested per EIA/JESD22 A115, Latchup Current Maximum Rating tested per JEDEC standard: JESD78. THERMAL CHARACTERISTICS (Note 3) Rating Symbol Value Unit Thermal Characteristics, uDFN4 1x1 mm 170 C/W R JA Thermal Resistance, JunctiontoAir 2 3. Single component mounted on 1 oz, FR 4 PCB with 645 mm Cu area. www.onsemi.com 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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