Product Information

MURS110T3G

MURS110T3G electronic component of ON Semiconductor

Datasheet
Rectifiers 100V 1A Ultrafast

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.1994 ea
Line Total: USD 498.5

12125 - Global Stock
Ships to you between
Mon. 27 May to Fri. 31 May
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
12125 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 2500
Multiples : 2500

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MURS110T3G
ON Semiconductor

2500 : USD 0.2177

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Factory Pack Quantity :
Category
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MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series Surface Mount Ultrafast Power Rectifiers www.onsemi.com MURS105T3G, MURS110T3G, MURS115T3G, MURS120T3G, MURS140T3G, MURS160T3G, ULTRAFAST RECTIFIERS SURS8105T3G, SURS8110T3G, SURS8115T3G, 1.0 AMPERE, 50600 VOLTS SURS8120T3G, SURS8140T3G, SURS8160T3G, NRVUS110VT3G, NRVUS120VT3G, NRVUS160VT3G Ideally suited for high voltage, high frequency rectification, or as SMB CASE 403A free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. MARKING DIAGRAM Features Small Compact Surface Mountable Package with JBend Leads AYWW Rectangular Package for Automated Handling U1x High Temperature Glass Passivated Junction Low Forward Voltage Drop (0.71 to 1.05 V Max 1.0 A, T = 150C) J A = Assembly Location* NRVUS and SURS8 Prefixes for Automotive and Other Applications Y = Year Requiring Unique Site and Control Change Requirements WW = Work Week AECQ101 Qualified and PPAP Capable U1 = Device Code These Devices are PbFree and are RoHS Compliant x = A, B, C, D, G, or J =PbFree Package (Note: Microdot may be in either location) Mechanical Characteristics: Case: Epoxy, Molded * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is Weight: 95 mg (Approximately) stamped in the package bottom (molding ejecter Finish: All External Surfaces Corrosion Resistant and Terminal pin), the front side assembly code may be blank. Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: ORDERING INFORMATION 260C Max. for 10 Seconds See detailed ordering and shipping information in the table on Polarity: Polarity Band Indicates Cathode Lead page 2 of this data sheet. ESD Rating: Human Body Model = 3B (> 8 kV) DEVICE MARKING INFORMATION See general marking information in the device marking table Machine Model = C (> 400 V) on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: April, 2019 Rev. 16 MURS120T3/DMURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series MAXIMUM RATINGS MURS/SURS8/NRVUS 115T3 120T3 140T3 160T3 105T3 110T3 Rating Symbol Unit Peak Repetitive Reverse Voltage V 50 100 150 200 400 600 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I 1.0 T = 155C 1.0 T = 150C A F(AV) L L 2.0 T = 145C 2.0 T = 125C L L NonRepetitive Peak Surge Current, (Surge applied I 40 35 A FSM at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature T 65 to +175 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS MURS/SURS8/NRVUS 105T3 110T3 115T3 120T3 140T3 160T3 Rating Symbol Unit Thermal Resistance R C/W JL JunctiontoLead (T = 25C) 13 L ELECTRICAL CHARACTERISTICS (T = 25C, Unless otherwise noted) A Maximum Instantaneous Forward Voltage (Note 1) v V F (i = 1.0 A, T = 25C) 0.875 1.25 F J (i = 1.0 A, T = 150C) 0.71 1.05 F J Maximum Instantaneous Reverse Current (Note 1) i A R (Rated DC Voltage, T = 25C) 2.0 5.0 J (Rated DC Voltage, T = 150C) 50 150 J Maximum Reverse Recovery Time t ns rr (i = 1.0 A, di/dt = 50 A/ s, V = 30 V) 35 75 F R (i = 0.5 A, i = 1.0 A, I to 0.25 A) 25 50 F R R Maximum Forward Recovery Time t ns fr (i = 1.0 A, di/dt = 100 A/ s, Rec. to 1.0 V) 25 50 F Typical Peak Reverse Recovery Current I 0.75 1.60 A RM (I = 1.0 A, di/dt = 50 A/ s) F 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping MURS105T3G, U1A SMB 2,500 Units / Tape & Reel SURS8105T3G* (PbFree) MURS110T3G, NRVUS110VT3G* U1B SMB 2,500 Units / Tape & Reel SURS8110T3G* (PbFree) MURS115T3G, U1C SMB 2,500 Units / Tape & Reel SURS8115T3G* (PbFree) MURS120T3G, NRVUS120VT3G* U1D SMB 2,500 Units / Tape & Reel SURS8120T3G* (PbFree) MURS140T3G, U1G SMB 2,500 Units / Tape & Reel SURS8140T3G* (PbFree) MURS160T3G, NRVUS160VT3G* U1J SMB 2,500 Units / Tape & Reel SURS8160T3G* (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NRVUS and SURS8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AEC Q101 Qualified and PPAP Capable. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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