Product Information

MMDL101T1G

MMDL101T1G electronic component of ON Semiconductor

Datasheet
Schottky Diodes & Rectifiers 7V 200mW Single
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0544 ea
Line Total: USD 163.2

11640 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 More Buying Options & Price Grid(s)

Availability Price Quantity
17401 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

MMDL101T1G
ON Semiconductor

1 : USD 0.1011
10 : USD 0.1001
25 : USD 0.099
100 : USD 0.0836
250 : USD 0.0699
500 : USD 0.0575
1000 : USD 0.0545
3000 : USD 0.0534
6000 : USD 0.0534
15000 : USD 0.0534

11640 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 3000
Multiples : 3000

Stock Image

MMDL101T1G
ON Semiconductor

3000 : USD 0.0544
15000 : USD 0.0493
24000 : USD 0.0483

17401 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 141
Multiples : 1

Stock Image

MMDL101T1G
ON Semiconductor

141 : USD 0.0836
250 : USD 0.0699
500 : USD 0.0575
1000 : USD 0.0545
3000 : USD 0.0534

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
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Additional Infomation About Product

MMDL101T1G Schottky Barrier Diode Schottky barrier diodes are designed primarily for highefficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features MMDL101T1G TYPICAL CHARACTERISTICS 1.0 100 0.7 0.5 V = 3.0 Vdc R 10 0.2 T = 85C T = - 40C A A 0.1 0.07 0.05 1.0 T = 25C A 0.02 MMBD110T1 MMBD110T1 0.1 0.01 30 40 50 60 70 80 90 100 110 120 130 0.3 0.4 0.5 0.6 0.7 0.8 T , AMBIENT TEMPERATURE (C) V , FORWARD VOLTAGE (VOLTS) A F Figure 1. Reverse Leakage Figure 2. Forward Voltage 1.0 11 10 LOCAL OSCILLATOR FREQUENCY = 1.0 GHz (Test Circuit Figure 5) 9 0.9 8 7 0.8 6 5 4 0.7 3 2 MMBD110T1 MMBD110T1 1 0.6 0 1.0 2.0 3.0 4.0 0.1 0.2 0.5 1.0 2.0 5.0 10 V , REVERSE VOLTAGE (VOLTS) P , LOCAL OSCILLATOR POWER (mW) R LO Figure 3. Capacitance Figure 4. Noise Figure LOCAL OSCILLATOR NOTES ON TESTING AND SPECIFICATIONS 2. C and C are measured using a capacitance bridge C T UHF DIODE IN (Boonton Electronics Model 75A or equivalent). NOISE SOURCE TUNED 3. Noise figure measured with diode under test in tuned diode H.P. 349A MOUNT mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5. NOISE IF AMPLIFIER FIGURE METER NF = 1.5 dB H.P. 342A f = 30 MHz Figure 5. Noise Figure Test Circuit

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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