Product Information

MMBFJ175LT1G

MMBFJ175LT1G electronic component of ON Semiconductor

Datasheet
SOT-23 JFETs ROHS
MMBFJ175LT1G is a low-noise N-channel JFET transistor from ON Semiconductor.
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0975 ea
Line Total: USD 0.1

9 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
9 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

MMBFJ175LT1G
ON Semiconductor

1 : USD 0.0975
10 : USD 0.0975

358 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 5
Multiples : 5

Stock Image

MMBFJ175LT1G
ON Semiconductor

5 : USD 0.2497
50 : USD 0.1988
150 : USD 0.177
500 : USD 0.1497
3000 : USD 0.1376
6000 : USD 0.1303

2017 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 5
Multiples : 5

Stock Image

MMBFJ175LT1G
ON Semiconductor

5 : USD 0.221
25 : USD 0.1989
100 : USD 0.1768
105 : USD 0.1521
290 : USD 0.1443

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Package / Case
Packaging
Brand
Breakdown Voltage Vbr
Zero Gate Voltage Drain Current Idss Min
Zero Gate Voltage Drain Current Idss Max
Gate-Source Cutoff Voltage Vgsoff Max
Transistor Case Style
Transistor Type
No. Of Pins
Operating Temperature Max
Msl
Svhc
Capacitance Ciss Max
Current Idss Max
Current Idss Min
Drain Source Voltage Vds
On State Resistance Max
Operating Temperature Min
Operating Temperature Range
Power Dissipation Pd
Power Dissipation Ptot Max
Smd Marking
Termination Type
Voltage Vgs Off Min
LoadingGif

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Additional Infomation About Product

The MMBFJ175LT1G is an N-channel Junction Field Effect Transistor (JFET). It is manufactured by ON Semiconductor and has a maximum voltage rating (Vds) of 175V. It has a total gate charge (Qg) of 2.0nC and a total drain-source on resistance (RDS(ON)) of 2.4ohm. This device is suitable for applications including high voltage power conversion, load switching, and signal processing.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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