Product Information

MJF6668

MJF6668 electronic component of ON Semiconductor

Datasheet
Darlington Transistors 10A 100V Bipolar

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

40: USD 1.8018 ea
Line Total: USD 72.07

0 - Global Stock
MOQ: 40  Multiples: 40
Pack Size: 40
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 40
Multiples : 40

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MJF6668
ON Semiconductor

40 : USD 1.8018
100 : USD 1.5537
250 : USD 1.4101
500 : USD 1.2926
1000 : USD 1.2534

     
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RoHS - XON
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MJF6388 (NPN), MJF6668 (PNP) Complementary Power Darlingtons For Isolated Package Applications MJF6388 (NPN), MJF6668 (PNP) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 5) V Vdc CEO(sus) (I = 30 mAdc, I = 0) 100 C B Collector Cutoff Current I Adc CEO (V = 80 Vdc, I = 0) 10 CE B Collector Cutoff Current I CEX (V = 100 Vdc, V = 1.5 Vdc) 10 Adc CE EB(off) (V = 100 Vdc, V = 1.5 Vdc, T = 125 C) 3.0 mAdc CE EB(off) C Collector Cutoff Current I Adc CBO (V = 100 Vdc, I = 0) 10 CB E Emitter Cutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 2.0 BE C ON CHARACTERISTICS (Note 5) DC Current Gain h FE (I = 3.0 Adc, V = 4.0 Vdc) 3000 15000 C CE (I = 5.0 Adc, V = 3.0 Vdc) 1000 C CE (I = 8.0 Adc, V = 4.0 Vdc) 200 C CE (I = 10 Adc, V = 3.0 Vdc) 100 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 3.0 Adc, I = 6.0 mAdc) 2.0 C B (I = 5.0 Adc, I = 0.01 Adc) 2.0 C B (I = 8.0 Adc, I = 80 mAdc) 2.5 C B (I = 10 Adc, I = 0.1 Adc) 3.0 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 5.0 Adc, I = 0.01 Adc) 2.8 C B (I = 10 Adc, I = 0.1 Adc) 4.5 C B BaseEmitter On Voltage V Vdc BE(on) (I = 8.0 Adc, V = 4.0 Vdc) 2.5 C CE DYNAMIC CHARACTERISTICS SmallSignal Current Gain h fe (I = 1.0 Adc, V = 5.0 Vdc, f = 1.0 MHz) 20 C CE test Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 1.0 MHz) CB E MJF6388 200 MJF6668 300 Insulation Capacitance C pF chs (CollectortoExternal Heatsink) 3.0 Typ SmallSignal Current Gain h fe (I = 1.0 Adc, V = 5.0 Vdc, f = 1.0 kHz) 1000 C CE 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. NPN PNP MJF6388 MJF6668 COLLECTOR COLLECTOR BASE BASE 8 k 120 8 k 120 EMITTER EMITTER Figure 1. Darlington Schematic

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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