The MJ11033G is a high-power, bipolar (BJT) transistor PNP Darlington manufactured by On Semiconductor. It is a through-hole TO-204 (TO-3) package capable of withstanding up to 120V, with a current rating of 50A and a power limit of 300W. The Darlington transistor is a 3-pin package with a single base, collector, and emitter connection. The NPN transistor within the Darlington is composed of two separate transistors connected in series and is commonly used in power supply applications due to its high current rating and wide gain range. The MJ11033G has a maximum collector-emitter voltage (VCEO) of 120V and a maximum collector-base voltage (VCBO) of 150V. It also has a collector-emitter saturation voltage (VCEsat) of between 0.2 and 1.0V, with the saturation dropping any further as the voltage and current increase. The small signal current gain (hFE) is between 1000 and 3000, providing excellent switching performance.