M MC74VHC1G09E 2-Input AND Gate with Open Drain Output The MC74VHC1G09E is an advanced high speed CMOS 2input AND gate with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar www.onsemi.com Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including an open MARKING drain output which provides the capability to set output switching level. DIAGRAMS This allows the MC74VHC1G09E to be used to interface 5 V circuits to circuits of any voltage between V and 5.5 V using an external resistor CC 5 and power supply. VX M The MC74VHC1G09E input structure provides protection when SC88A / SOT353 / SC70 voltages up to 5.5 V are applied, regardless of the supply voltage. DF SUFFIX 1 CASE 419A Features High Speed: t = 4.3 ns (Typ) at V = 5 V PD CC VX = Device Code Low Internal Power Dissipation: I = 1 A (Max) at T = 25C CC A M = Date Code* Power Down Protection Provided on Inputs = PbFree Package (Note: Microdot may be in either location) Pin and Function Compatible with Other Standard Logic Families *Date Code orientation and/or position may Chip Complexity: FETs = 62 Equivalent Gates = 16 vary depending upon manufacturing location. These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant PIN ASSIGNMENT 1 IN B 2 IN A 1 V IN B 5 CC 3 GND OVT 4 OUT Y 5V IN A 2 CC FUNCTION TABLE Inputs Output GND 3 4 OUT Y AB Y L L L Figure 1. Pinout (Top View) L H L H L L IN A H H Z & OUT Y IN B Figure 2. Logic Symbol ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: September, 2018 Rev. 1 MC74VHC1G09E/DMC74VHC1G09E MAXIMUM RATINGS Symbol Characteristics Value Unit V DC Supply Voltage 0.5 to +6.5 V CC V DC Input Voltage 0.5 to +6.5 V IN V DC Output Voltage 0.5 to +6.5 V OUT I Input Diode Current 20 mA IK I Output Diode Current +20 mA OK I DC Output Current, per Pin +25 mA OUT I DC Supply Current, V and GND +50 mA CC CC P Power dissipation in still air 200 mW D Thermal resistance 333 C/W JA T Lead temperature, 1 mm from case for 10 s 260 C L T Junction temperature under bias +150 C J T Storage temperature 65 to +150 C stg MSL Moisture Sensitivity Level 1 F Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 0.125 in R V ESD Withstand Voltage Human Body Model (Note 1) 4000 V ESD Charged Device Model (Note 2) 1000 I Latchup Performance Above V and Below GND at 125C (Note 3) 100 mA Latchup CC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Tested to EIA/JESD22A114A 2. Tested to JESD22C101A 3. Tested to EIA/JESD78 RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit V DC Supply Voltage 2.0 5.5 V CC V DC Input Voltage 0.0 5.5 V IN V DC Output Voltage 0.0 7.0 V OUT T Operating Temperature Range 55 +125 C A t , t Input Rise and Fall Time V = 3.3 V 0.3 V 0 10 ns/V r f CC V = 5.0 V 0.5 V 0 5 CC Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2