Product Information

MBT3904DW1T1

MBT3904DW1T1 electronic component of ON Semiconductor

Datasheet
Bipolar Transistors - BJT 200mA 60V Dual NPN

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

8013: USD 0.0551 ea
Line Total: USD 441.52

551128 - Global Stock
Ships to you between
Mon. 06 May to Fri. 10 May
MOQ: 8013  Multiples: 8013
Pack Size: 8013
Availability Price Quantity
7081 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 10
Multiples : 1

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MBT3904DW1T1
ON Semiconductor

10 : USD 3.2944
100 : USD 0.3977
500 : USD 0.1463

     
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RoHS - XON
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MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 Dual General Purpose www.onsemi.com Transistors MARKING The MBT3904DW1 and MBT3904DW2 devices are a spinoff of DIAGRAM our popular SOT23/SOT323 threeleaded device. It is designed for 6 general purpose amplifier applications and is housed in the SOT363 SOT363/SC88/ sixleaded surface mount package. By putting two discrete devices in XX M 6 SC706 one package, this device is ideal for lowpower surface mount  CASE 419B applications where board space is at a premium. 1 1 Features XX = MA for MBT3904DW1T1G h , 100300 FE MJ for MBT3904DW2T1G Low V , 0.4 V M = Date Code CE(sat)  = PbFree Package Simplifies Circuit Design (Note: Microdot may be in either location) Reduces Board Space Reduces Component Count (3) (2) (1) Available in 8 mm, 7inch/3,000 Unit Tape and Reel S and NSV Prefix for Automotive and Other Applications Requiring Q Q 1 2 Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS (4) (5) (6) Compliant MBT3904DW1T1 MAXIMUM RATINGS STYLE 1 (3) (2) (1) Rating Symbol Value Unit CollectorEmitter Voltage V 40 Vdc CEO Q 2 CollectorBase Voltage V 60 Vdc CBO Q 1 EmitterBase Voltage V 6.0 Vdc EBO Collector Current Continuous I 200 mAdc C (4) (5) (6) Electrostatic Discharge ESD HBM Class 2 MM Class B MBT3904DW2T1 STYLE 27 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. Device Package Shipping THERMAL CHARACTERISTICS MBT3904DW1T1G, 3000 / SOT363 Characteristic Symbol Max Unit MBT3904DW2T1G Tape & Reel (PbFree) Total Package Dissipation (Note 1) P 150 mW D SMBT3904DW1T1G SOT363 3000 / T = 25C A (PbFree) Tape & Reel Thermal Resistance, R 833 C/W JA JunctiontoAmbient NSVMBT3904DW1T3G 10000 / SOT363 Tape & Reel (PbFree) Junction and Storage T , T 55 to +150 C J stg Temperature Range For information on tape and reel specifications, 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum including part orientation and tape sizes, please recommended footprint. s refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: June, 2015 Rev. 11 MBT3904DW1T1/DMBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 2) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 40 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) 60 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 6.0 E C Base Cutoff Current I nAdc BL (V = 30 Vdc, V = 3.0 Vdc) 50 CE EB Collector Cutoff Current I nAdc CEX (V = 30 Vdc, V = 3.0 Vdc) 50 CE EB ON CHARACTERISTICS (Note 2) DC Current Gain h FE (I = 0.1 mAdc, V = 1.0 Vdc) 40 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 70 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE (I = 100 mAdc, V = 1.0 Vdc) 30 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.2 C B (I = 50 mAdc, I = 5.0 mAdc) 0.3 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) 300 C CE Output Capacitance C pF obo (V = 5.0 Vdc, I = 0, f = 1.0 MHz) 4.0 CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 8.0 EB C Input Impedance h k  ie (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 1.0 10 CE C 2.0 12 4 Voltage Feedback Ratio h X 10 re (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 0.5 8.0 CE C 0.1 10 SmallSignal Current Gain h fe (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 100 400 CE C 100 400 Output Admittance h mhos oe (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 1.0 40 CE C 3.0 60 Noise Figure NF dB (V = 5.0 Vdc, I = 100 Adc, R = 1.0 k , f = 1.0 kHz) 5.0 CE C S 2. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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