Product Information

MAC8SMG

MAC8SMG electronic component of ON Semiconductor

Datasheet
TRIAC Logic - Sensitive Gate 600 V 8 A Through Hole TO-220AB

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.675 ea
Line Total: USD 0.68

2264 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1090 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

MAC8SMG
ON Semiconductor

1 : USD 1.5755
10 : USD 1.288
100 : USD 1.0327
500 : USD 0.8751
1000 : USD 0.713
2000 : USD 0.675

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Breakover Current Ibo Max
Off-State Leakage Current Vdrm Idrm
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Product Type
Subcategory
Taric
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Thyristors Datasheet MAC8SDG, MAC8SMG, MAC8SNG Surface Mount 50V RoHS Pb Description Designed for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. The MAC8SxG is designed for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. Features Sensitive Gate Allows OnState Current Rating of 8 Triggering by Microcontrollers Amperes RMS at 70C and other Logic Circuits High Surge Current Capability Uniform Gate Trigger Currents 70 Amperes in Three Quadrants Q1, Q2, Blocking Voltage to 800 Volts and Q3 Rugged, Economical TO220 Additional Information High Immunity to dv/dt 25 Package V/s Minimum at 110C These Devices are PbFree High Commutating di/dt 8.0 and are RoHS Compliant A/ms Minimum at 110C Maximum Values of I , V GT GT and I Specified for Ease of H Design Resources Accessories Samples Functional Diagram MT 2 MT 1 G Pin Out CASE 221A STYLE 4 1 2 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 02/19/21Thyristors Datasheet MAC8SDG, MAC8SMG, MAC8SNG Surface Mount 50V Maximum Ratings (TJ = 25C unless otherwise noted) Rating Symbol Value Unit MAC8SDG 400 Peak Repetitive Off-State Voltage (Note 1) V , DRM MAC8SMG 600 V (Gate Open, Sine Wave 50 to 60 Hz, T = 25 to 110C) V J RRM MAC8SNG 800 On-State RMS Current (Full Cycle Sine Wave, 60 Hz, T = 70C) I 8.0 A C T (RMS) Peak Non-Repetitive Surge Current I 70 A TSM (One Full Cycle Sine Wave, 60 Hz, T = 110C) J 2 Circuit Fusing Consideration (t = 8.3 ms) I t 20 Asec Peak Gate Power (Pulse Width 1.0 s, T = 70C) P 16 W C GM Average Gate Power (t = 8.3 ms, T = 70C) P 0.35 W C G(AV) Operating Junction Temperature Range T -40 to +110 C J Storage Temperature Range T -40 to +150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages DRM RRM shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit JunctiontoCase (AC) R 2.2 JC Thermal Resistance, C/W JunctiontoAmbient R 62.5 JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for T 260 C L 10 seconds Electrical Characteristics - OFF (TJ = 25C unless otherwise noted Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit - - 0.01 Peak Repetitive Blocking Current T = 25C I , J DRM mA (V = V = V Gate Open) T = 110C I D DRM RRM J RRM - - 2.0 Electrical Characteristics - ON (TJ = 25C unless otherwise noted Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit Peak OnState Voltage (Note 4) (I = 11 A) V 1.85 V TM TM MT2(+), G(+) 2.0 5.0 Gate Trigger Current (Continuous dc) MT2(+), G() I 3.0 5.0 mA GT (V = 12 V, R = 100 ) D L MT2(), G() 3.0 5.0 Holding Current (V = 12 V, Gate Open, Initiating Current = 150 mA)) I 3.0 10 mA D H MT2(+), G(+) 5.0 15 Latching Current MT2(+), G() I 10 20 mA L (V = 24 V, I = 5 mA) D G MT2(), G() 5.0 15 MT2(+), G(+) 0.45 0.62 1.5 Gate Trigger Voltage MT2(+), G() V 0.45 0.60 1.5 V GT (V = 12 V, R = 100 ) D L MT2(), G() 0.45 0.65 1.5 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 02/19/21

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
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FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
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ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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