Product Information

MAC4DHMT4G

MAC4DHMT4G electronic component of ON Semiconductor

Datasheet
ON Semiconductor Triacs THY 4A 600V TRIAC

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6851 ea
Line Total: USD 0.69

337059 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
96553 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

MAC4DHMT4G
ON Semiconductor

1 : USD 0.713
10 : USD 0.6164
100 : USD 0.4266
500 : USD 0.3577
1000 : USD 0.3347
2500 : USD 0.3335

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Off-State Leakage Current Vdrm Idrm
Package Case
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Product Type
Subcategory
Taric
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Thyristors Surface Mount 600V > MAC4DHM Pb MAC4DHM Description The MAC4DHM is designed for high volume, low cost, industrial and consumer applications such as motor control process control temperature, light and speed control. Features Small Size Surface Mount Epoxy Meets UL 94 V0 DPAK Package 0.125 in Passivated Die for ESD Ratings: Human Reliability and Uniformity Body Model, 3B > 8000 V FourQuadrant Triggering Machine Model, C > 400V Blocking Voltage to 600 V LeadFree Packages are Available OnState Current Rating of 4.0 A RMS at 93C Low Level Triggering and Holding Characteristics Pin Out Functional Diagram 4 MT2 MT1 4 G 2 1 3 1 2 3 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/01/20Thyristors Surface Mount 600V > MAC4DHM Maximum Ratings (T = 25C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive Off-State Voltage (Note 1) V , DRM 600 V (Gate Open, Sine Wave 50 to 60 Hz, T = -40 to 110C) V J RRM On-State RMS Current (Full Cycle Sine Wave, 60 Hz, T = 93C) I 4.0 A C T (RMS) Peak Non-Repetitive Surge Current I 40 A TSM (One Full Cycle Sine Wave, 60 Hz, T = 110C) C 2 Circuit Fusing Consideration (t = 8.3 msec) I t 6.6 Asec Peak Gate Current (Pulse Width 20 sec, T = 108C) I 4.0 A C GM Peak Gate Power (Pulse Width 10 sec, T = 108C) P 2.0 W C GM Peak Gate Voltage (Pulse Width 20 sec, T= 93C) V 5.0 V C GM Average Gate Power (t = 8.3 msec, T = 108C) P 1.0 W C G(AV) Operating Junction Temperature Range T -40 to +110 C J Storage Temperature Range T -40 to +150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages DRM RRM shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit JunctiontoCase (AC) R 3.5 JC Thermal Resistance, JunctiontoAmbient R 88 C/W JA (Note 2) JunctiontoAmbient R 80 JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for T 260 C L 10 seconds 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3. 1/8 from case for 10 seconds. Electrical Characteristics - OFF (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit - - 0.01 Peak Repetitive Blocking Current T = 25C I , J DRM mA (V = V = V Gate Open) T = 110C I - - 2.0 D DRM RRM J RRM Electrical Characteristics - ON (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit Peak OnState Voltage (Note 4) (I = 6.0 A) V 1.3 1.6 V TM TM MT2(+), G(+) 1.8 5.0 Gate Trigger Current MT2(+), G() 2.1 5.0 (Continuous dc) I mA GT MT2(), G() 2.4 5.0 (V = 12 V, R = 100 ) D L MT2(), G(+) 4.2 10 Holding Current (V = 12 V, Gate Open, Initiating Current = 200 mA)) I - 1.5 15 mA D H Gate NonTrigger Voltage (Continuous dc) (V = 12 V, R = 100 , T = 110C) D L J V 0.1 0.4 - V GD All Four Quadrants (V = 12 V, I = 5.0 mA) MT2(+), G(+) 1.75 10 D G (V = 12 V, I = 5.0 mA) MT2(+), G() 5.2 10 D G Latching Current I mA L (V = 12 V, I = 5.0 mA) MT2(), G() 2.1 10 D G (V = 12 V, I = 10 mA) MT2(), G(+) 2.2 10 D G MT2(+), G(+) 0.5 0.62 1.3 Gate Trigger Voltage MT2(+), G() 0.5 0.57 1.3 (Continuous dc) V V GT MT2(), G() 0.5 0.65 1.3 (V = 12 V, R = 100 ) D L MT2(), G(+) 0.5 0.74 1.3 4. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/01/20

Tariff Desc

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