Product Information

LM385BZ-1.2G

LM385BZ-1.2G electronic component of ON Semiconductor

Datasheet
Voltage References 1.2V 10uA-20mA

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 0.6929 ea
Line Total: USD 2.08

1828 - Global Stock
Ships to you between
Mon. 06 May to Fri. 10 May
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
1828 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 3
Multiples : 1

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LM385BZ-1.2G
ON Semiconductor

3 : USD 0.6981
25 : USD 0.6136
34 : USD 0.4797
93 : USD 0.4537
500 : USD 0.4472

     
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RoHS - XON
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Shunt Current - Max
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Shunt Current - Min
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Cnhts
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LM285, LM385B Micropower Voltage Reference Diodes The LM285/LM385 series are micropower twoterminal bandgap voltage regulator diodes. Designed to operate over a wide current range of 10 A to 20 mA, these devices feature exceptionally low www.onsemi.com dynamic impedance, low noise and stable operation over time and temperature. Tight voltage tolerances are achieved by onchip MARKING trimming. The large dynamic operating range enables these devices to DIAGRAMS be used in applications with widely varying supplies with excellent regulation. Extremely low operating current make these devices ideal 8 for micropower circuitry like portable instrumentation, regulators and SOIC8 y85z other analog circuitry where extended battery life is required. ALYW D SUFFIX 8 The LM285/LM385 series are packaged in a low cost TO226 CASE 751 1 1 plastic case and are available in two voltage versions of 1.235 V and 2.500 V as denoted by the device suffix (see Ordering Information table). The LM285 is specified over a 40C to +85C temperature range while the LM385 is rated from 0C to +70C. The LM385 is also available in a surface mount plastic package in LMy85 TO92 Zxxx (TO226) voltages of 1.235 V and 2.500 V. ALYW N.C. Z SUFFIX CASE 29 Cathode Features Anode Operating Current from 10 A to 20 mA 1.0%, 1.5%, 2.0% and 3.0% Initial Tolerance Grades xxx = 1.2 or 2.5 y = 2 or 3 Low Temperature Coefficient z = 1 or 2 1.0 Dynamic Impedance A = Assembly Location L = Wafer Lot Surface Mount Package Available Y = Year These Devices are PbFree and are RoHS Compliant W = Work Week = PbFree Package (Note: Microdot may be in either location) Cathode 10 k 360 k (Bottom View) 8 1 N.C. Cathode Open 12 3 2 7 N.C. N.C. for 1.235 V 3 6 N.C. N.C. 4 5 N.C. Anode 600 k 8.45 k Standard Application 74.3 k 600 k + Open 1.5 V 3.3 k 425 k for 2.5 V Battery - 1.235 V 600 k 500 100 k LM3851.2 Anode ORDERING INFORMATION Figure 1. Representative Schematic Diagram See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2016 Rev. 9 LM285/DLM285, LM385B MAXIMUM RATINGS (T = 25C, unless otherwise noted) A Rating Symbol Value Unit Reverse Current I 30 mA R Forward Current I 10 mA F Operating Ambient Temperature Range T C A LM285 40 to +85 LM385 0 to +70 Operating Junction Temperature T +150 C J Storage Temperature Range T 65 to + 150 C stg Electrostatic Discharge Sensitivity (ESD) ESD V Human Body Model (HBM) 4000 Machine Model (MM) 400 Charged Device Model (CDM) 2000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise noted) A LM2851.2 LM3851.2/LM385B1.2 Min Typ Max Min Typ Max Characteristic Symbol Unit Reverse Breakdown Voltage (I I 20 mA) V V Rmin R (BR)R LM2851.2/LM385B1.2 1.223 1.235 1.247 1.223 1.235 1.247 T = T to T (Note 1) 1.200 1.270 1.210 1.260 A low high LM3851.2 1.205 1.235 1.260 T = T to T (Note 1) 1.192 1.273 A low high Minimum Operating Current I A Rmin T = 25C 8.0 8.0 A 10 15 T = T to T (Note 1) A low high 20 20 Reverse Breakdown Voltage Change with Current mV V (BR)R I I 1.0 mA, T = +25C Rmin R A 1.0 1.0 T = T to T (Note 1) 1.5 1.5 A low high 10 20 1.0 mA I 20 mA, T = +25C R A 20 25 T = T to T (Note 1) A low high Reverse Dynamic Impedance Z 0.6 0.6 I = 100 A, T = +25C R A Average Temperature Coefficient V / T ppm/C (BR) 80 80 10 A I 20 mA, T = T to T (Note 1) R A low high Wideband Noise (RMS) n V I = 100 A, 10 Hz f 10 kHz 60 60 R Long Term Stability S ppm/kHR I = 100 A, T = +25C 0.1C R A 20 20 Reverse Breakdown Voltage (I I 20 mA) V V Rmin R (BR)R LM2852.5/LM385B2.5 2.462 2.5 2.538 2.462 2.5 2.538 T = T to T (Note 1) 2.415 2.585 2.436 2.564 A low high LM3852.5 2.425 2.5 2.575 T = T to T (Note 1) 2.400 2.600 A low high Minimum Operating Current I A Rmin 13 20 13 20 T = 25C A T = T to T (Note 1) 30 30 A low high 1. T = 40C for LM2851.2, LM2852.5 low T = +85C for LM2851.2, LM2852.5 high T = 0C for LM3851.2, LM385B1.2, LM3852.5, LM385B2.5 low T =+70C for LM3851.2, LM385B1.2, LM3852.5, LM385B2.5 high www.onsemi.com 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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