Product Information

FQP6N90C

FQP6N90C electronic component of ON Semiconductor

Datasheet
Transistor: N-MOSFET; unipolar; 900V; 3.8A; 167W; TO220AB
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.9866 ea
Line Total: USD 2.99

840 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
840 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

FQP6N90C
ON Semiconductor

1 : USD 2.9866
10 : USD 2.5815
50 : USD 2.1381
100 : USD 1.8782
500 : USD 1.7614
1000 : USD 1.709

407 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 6
Multiples : 1

Stock Image

FQP6N90C
ON Semiconductor

6 : USD 2.1743
10 : USD 2.0501
25 : USD 1.9239
50 : USD 1.8855

Read More Specifications

     
Manufacturer
Product Category
Technology
Kind Of Package
Case
Polarisation
Mounting
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Gate Charge
Power Dissipation
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Additional Infomation About Product

The FQP6N90C transistor manufactured by ON Semiconductor is an N-channel Metal-Oxide-Semiconductor (MOSFET) Field Effect Transistor with a unipolar level. This transistor has an operating voltage of 900V and a continuous DC drain current of 3.8A. It also features a drain source breakdown voltage of 800V, a drain source on-resistance of 0.6 ohms and a power dissipation of 167W at 25°C. It comes in a TO-220AB package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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