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Low saturation voltage : V = 2.3 V I = 20A CE(sat) C The UFD series is designed for applications such as motor High input impedance control and general inverters where high speed switching is CO-PAK, IGBT with FRD : t = 50ns (typ.) rr a required feature. Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. CC GG TO-3PF EE G C E Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Description FGAF40N60UFD Units V Collector-Emitter Voltage 600 V CES V Gate-Emitter Voltage 20 V GES Collector Current T = 25C40 A C I C Collector Current T = 100C20 A C I Pulsed Collector Current 160 A CM (1) I Diode Continuous Forward Current T = 100C15 A F C I Diode Maximum Forward Current 160 A FM P Maximum Power Dissipation T = 25C 100 W D C Maximum Power Dissipation T = 100C40 W C T Operating Junction Temperature -55 to +150 C J T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for Soldering T 300 C L Purposes, 1/8 from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R (IGBT) Thermal Resistance, Junction-to-Case -- 1.2 C/W JC R (DIODE) Thermal Resistance, Junction-to-Case -- 2.6 C/W JC R Thermal Resistance, Junction-to-Ambient -- 40 C/W JA 2004 Fairchild Semiconductor Corporation FGAF40N60UFD Rev. A