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This literature is subject to all applicable copyright laws and is not for resale in any manner.FGA30S120P 1300 V, 30 A Shorted-anode IGBT April 2016 FGA30S120P 1300 V, 30 A Shorted-anode IGBT Features General Description High Speed Switching Using advanced field stop trench and shorted-anode technol- ogy, Fairchilds shorted-anode Trench IGBTs offer superior con- Low Saturation Voltage: V = 1.75 V I = 30 A CE(sat) C duction and switching performances for soft switching High Input Impedance applications. The device can operate in parallel configuration RoHS Compliant with exceptional avalanche capability. This device is designed for induction heating and microwave oven. Applications Induction Heating, Microwave Oven C G TO-3PN E G C E Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Description Ratings Unit V Collector to Emitter Voltage 1300 V CES V Gate to Emitter Voltage 25 V GES o Collector Current T = 25C60 A C I C o Collector Current T = 100C30 A C I Pulsed Collector Current 150 A CM (1) o I Diode Continuous Forward Current 60 A T = 25 C F C o I Diode Continuous Forward Current 30 A T = 100 C F C o Maximum Power Dissipation T = 25C348 W C P D o Maximum Power Dissipation T = 100C174 W C o T Operating Junction Temperature -55 to +175 C J o T Storage Temperature Range -55 to +175 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter Typ. Max. Unit o R (IGBT) Thermal Resistance, Junction to Case -- 0.43 C/W JC o R Thermal Resistance, Junction to Ambient -- 40 C/W JA Notes: 1: Limited by Tjmax 2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGA30S120P Rev. 1.10