Silicon Carbide Schottky Diode 650 V, 10 A FFSB1065B-F085 Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, 1., 3. Cathode 2. Anode faster operating frequency, increased power density, reduced EMI, and Schottky Diode reduced system size & cost. Features Max Junction Temperature 175C 3 Avalanche Rated 49 mJ 1 High Surge Current Capacity 2 Positive Temperature Coefficient 2 D PAK2 (TO2632L) Ease of Paralleling CASE 418BK No Reverse Recovery / No Forward Recovery AECQ101 Qualified and PPAP Capable MARKING DIAGRAM These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Applications Y&Z&3&K FFSB Automotive HEVEV Onboard Chargers 1065B Automotive HEVEV DCDC Converters Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FFSB1065B = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: August, 2020 Rev. 2 FFSB1065BF085/DFFSB1065B F085 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 650 V RRM E Single Pulse Avalanche Energy (Note 1) 49 mJ AS I Continuous Rectified Forward Current T < 25C 27 A F C Continuous Rectified Forward Current T < 146C 10 C I Non-Repetitive Peak Forward Surge Current T = 25C, 10 s 650 A F, Max C 570 A T = 150C, 10 s C I Non-Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 45 A F,SM p T = 25C C Ptot Power Dissipation T = 25C 79 W C T = 150C 13 W C T , T Operating and Storage Temperature Range 55 to +175 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. E of 49 mJ is based on starting T = 25C, L = 0.5 mH, I = 14 A, V = 50 V. AS J AS THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max 1.9 C/W JC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Condition Min Typ Max Unit V Forward Voltage I = 10 A, T = 25C 1.38 1.7 V F F C I = 10 A, T = 125C 1.6 2.0 F C I = 10 A, T = 175C 1.72 2.4 F C I Reverse Current V = 650 V, T = 25C 0.5 40 A R R C V = 650 V, T = 125C 1 80 R C V = 650 V, T = 175C 2 160 R C Q Total Capacitive Charge V = 400 V 25 nC C C Total Capacitance pF V = 1 V, f = 100 kHz 421 R V = 200 V, f = 100 kHz 46 R V = 400 V, f = 100 kHz 35 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Marking Package Shipping* 2 FFSB1065BF085 FFSB1065B D PAK3 800 / Tape & Reel (Pb-Free / Halogen Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D www.onsemi.com 2