Product Information

FDY1002PZ

FDY1002PZ electronic component of ON Semiconductor

Datasheet
MOSFET -20V DUAL P-CHAN POWERTRENCH

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1818 ea
Line Total: USD 545.4

34920 - Global Stock
Ships to you between
Tue. 14 May to Mon. 20 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
1013 - WHS 1


Ships to you between
Tue. 21 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

FDY1002PZ
ON Semiconductor

1 : USD 0.3474
10 : USD 0.3112
30 : USD 0.2923
100 : USD 0.2742
500 : USD 0.2634
1000 : USD 0.2582

2910 - WHS 2


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 3000
Multiples : 3000

Stock Image

FDY1002PZ
ON Semiconductor

3000 : USD 0.1838

34920 - WHS 3


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 3000
Multiples : 3000

Stock Image

FDY1002PZ
ON Semiconductor

3000 : USD 0.1818

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Product
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDY1002PZ Dual P-Channel (1.5 V) Specified PowerTrench MOSFET FDY1002PZ Dual P-Channel (1.5 V) Specified PowerTrench MOSFET 20 V, 0.83 A, 0.5 Features General Description Max r = 0.5 at V = 4.5 V, I = 0.83 A DS(on) GS D This Dual P-Channel MOSFET has been designed using Max r = 0.7 at V = 2.5 V, I = 0.70 A DS(on) GS D ON Semiconductors advanced Power Trench process to Max r = 1.2 at V = 1.8 V, I = 0.43 A DS(on) GS D optimize the r V = 1.5 V. DS(on) GS Max r = 1.8 at V = 1.5 V, I = 0.36 A DS(on) GS D Application HBM ESD protection level = 1400 V (Note 3) RoHS Compliant Li-Ion Battery Pack 6 5 S D 1 6 1 1 4 G G 2 5 1 2 1 S 4 3 D 2 2 2 3 SC89-6 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 20 V DS V Gate to Source Voltage 8 V GS Drain Current -Continuous (Note 1a) 0.83 I A D -Pulsed 1.0 Power Dissipation (Note 1a) 0.625 P W D Power Dissipation (Note 1b) 0.446 T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 200 JA C/W R Thermal Resistance, Junction to Ambient (Note 1b) 280 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity G FDY1002PZ SC89-6 7 8 mm 3000 units 2008 Semiconductor Components Industries, LLC. Publication Order Number: 1 October-2017, Rev.2 FDY1002PZ/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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