Product Information

FDP7N60NZ

FDP7N60NZ electronic component of ON Semiconductor

Datasheet
MOSFET 600V N-Chan MOSFET UniFET-II
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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0 - WHS 1

MOQ : 1000
Multiples : 1000

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FDP7N60NZ
ON Semiconductor

1000 : USD 0.5413
2000 : USD 0.5413
3000 : USD 0.5413
4000 : USD 0.5413
5000 : USD 0.5413
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0 - WHS 2

MOQ : 1000
Multiples : 1000

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FDP7N60NZ
ON Semiconductor

1000 : USD 0.7303
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MOQ : 1
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FDP7N60NZ
ON Semiconductor

1 : USD 1.3815
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MOQ : 1
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FDP7N60NZ
ON Semiconductor

1 : USD 2.2316
10 : USD 1.9245
30 : USD 1.7569
100 : USD 1.5657
500 : USD 1.482
1000 : USD 1.4433
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0 - WHS 5

MOQ : 1
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FDP7N60NZ
ON Semiconductor

1 : USD 2.5132
10 : USD 1.7909
25 : USD 1.7152
100 : USD 1.4756
500 : USD 1.1981
1000 : USD 1.0174
2000 : USD 0.9883
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0 - WHS 6

MOQ : 1
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FDP7N60NZ
ON Semiconductor

1 : USD 1.5105
5 : USD 1.3061
16 : USD 0.9899
43 : USD 0.9295
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0 - WHS 7

MOQ : 10
Multiples : 1

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FDP7N60NZ
ON Semiconductor

10 : USD 0.7955
100 : USD 0.7194
500 : USD 0.695
1000 : USD 0.6717
2000 : USD 0.6582
N/A

Obsolete
0 - WHS 8

MOQ : 10
Multiples : 1

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FDP7N60NZ
ON Semiconductor

10 : USD 0.7955
100 : USD 0.7194
500 : USD 0.695
1000 : USD 0.6717
2000 : USD 0.6582
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Mounting Style
Package / Case
Packaging
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Category
Brand Category
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Additional Infomation About Product

The FDP7N60NZ is a 600V N-channel MOSFET UniFET-II manufactured by ON Semiconductor. It is an enhancement-mode, field effect transistor that uses a vertical, double diffused junction structure. This MOSFET can be used in applications such as power supplies, DC-DC converters, motor controls, defibrillators, and industrial controls. It has an on-resistance per channel of 7 m? and an extended drain-source voltage of -500V IDSS. The device features a low gate charge and small size that allows for easier integration into designs. It also includes avalanche/dv/dt protection and a fast recovery from overloads.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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ON
ON SEMI
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ON SEMICONDUCTOR (FAIRCHILD)
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ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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