Product Information

FDB86569-F085

FDB86569-F085 electronic component of ON Semiconductor

Datasheet
Trans MOSFET N-CH 60V 110A Automotive 3-Pin(2+Tab) TO-263 T/R

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

FDB86569-F085
ON Semiconductor

1 : USD 4.701
10 : USD 1.9544
25 : USD 1.8032
100 : USD 1.3475
250 : USD 1.3346
500 : USD 1.1196
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

FDB86569-F085
ON Semiconductor

1 : USD 4.0777
10 : USD 1.5291
25 : USD 1.4027
100 : USD 1.2179
500 : USD 1.0254
800 : USD 0.8721
2400 : USD 0.845
N/A

Obsolete
     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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MOSFET N-Channel, POWERTRENCH 60 V, 80 A, 5.6 m FDB86569-F085 Features www.onsemi.com Typical R = 4.4 m at V = 10 V, I = 80 A DS(on) GS D Typical Q = 35 nC at V = 10 V, I = 80 A g(tot) GS D D UIS Capability These Device is PbFree and is RoHS Compliant Qualified to AECQ101 G Applications Automotive Engine Control S PowerTrain Management D2PAK3 Solenoid and Motor Drivers CASE 418AJ Integrated Starter/Alternator FDB SERIES Primary Switch for 12 V Systems DRAIN GATE SOURCE MARKING DIAGRAM Y&Z&3&K FDB 86569 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FDB86569 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2020 Rev. 3 FDB86569F085/DFDB86569 F085 MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 60 V DSS V Gate to Source Voltage 20 V GS I Drain Current Continuous (V = 10 V) (Note 1) T = 25C 80 A D GS C Pulsed Drain Current T = 25C See Figure 4 A C E Single Pulse Avalanche Energy (Note 2) 41 mJ AS P Power Dissipation (T = 25C) 94 W D C Derate Above 25C 0.63 W/C T , T Operating and Storage Temperature 55 to +175 C J STG R Thermal Resistance Junction to Case 1.6 C/W JC R Maximum Thermal Resistance, Junction to Ambient (Note 3) 43 C/W JA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by bondwire configuration. 2. Starting T = 25C, L = 15 H, I = 74 A, V = 60 V during inductor charging and V = 0 V during time in avalanche. J AS DD DD 3. R is the sum of the junctiontocase and casetoambient thermal resistance, where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design, while R is determined by the board design. The maximum rating JC JA 2 presented here is based on mounting on a 1 in pad of 2oz copper. PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity 2 FDB86569 FDB86569F085 D PAK (TO263) 330 mm 24 mm 800 Units www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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