Product Information

FCP11N60N

FCP11N60N electronic component of ON Semiconductor

Datasheet
MOSFET SupreMOS 11A
Power MOSFET with a low gate charge and optimized body diode.

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 800
Multiples : 1

Stock Image

FCP11N60N
ON Semiconductor

800 : USD 1.8838
1000 : USD 1.6057
2500 : USD 1.5667
5000 : USD 1.5344
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

FCP11N60N
ON Semiconductor

1 : USD 6.37
10 : USD 5.522
100 : USD 4.5246
500 : USD 3.8517
1000 : USD 3.6914
N/A

Obsolete
0 - WHS 3

MOQ : 800
Multiples : 800

Stock Image

FCP11N60N
ON Semiconductor

800 : USD 1.4552
1600 : USD 1.4552
2400 : USD 1.4552
3200 : USD 1.4552
N/A

Obsolete
0 - WHS 4

MOQ : 50
Multiples : 1

Stock Image

FCP11N60N
ON Semiconductor

50 : USD 1.828
60 : USD 1.7379
110 : USD 1.7081
250 : USD 1.6633
500 : USD 1.6484
N/A

Obsolete
0 - WHS 5

MOQ : 209
Multiples : 209

Stock Image

FCP11N60N
ON Semiconductor

209 : USD 2.0826
N/A

Obsolete
0 - WHS 6

MOQ : 1
Multiples : 1

Stock Image

FCP11N60N
ON Semiconductor

1 : USD 5.6859
10 : USD 4.0372
25 : USD 3.8092
100 : USD 3.3129
250 : USD 3.0566
500 : USD 2.502
800 : USD 2.128
2400 : USD 2.1022
N/A

Obsolete
0 - WHS 7

MOQ : 800
Multiples : 800

Stock Image

FCP11N60N
ON Semiconductor

800 : USD 1.4112
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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FCP11N60N is a N-Channel 600V 7.7A High Speed MOSFET manufactured by ON Semiconductor. It is optimized for high speed switch applications and has a low gate charge, low on-state resistance, avalanche rated, and a low leakage current. This device has a high maximum junction and operating temperature of 175°C, which allows it to be used in more demanding applications. Additionally, it is also RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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