Product Information

DLA11C-TR-E

DLA11C-TR-E electronic component of ON Semiconductor

Datasheet
ON Semiconductor Rectifiers REC DIODE 1.1A 200V

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 2137
Multiples : 2137

Stock Image

DLA11C-TR-E
ON Semiconductor

2137 : USD 0.1968
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

DLA11C-TR-E
ON Semiconductor

1 : USD 0.6085
10 : USD 0.501
100 : USD 0.3229
1000 : USD 0.2585
2000 : USD 0.2326
10000 : USD 0.2326
24000 : USD 0.2242
50000 : USD 0.2211
100000 : USD 0.2158
N/A

Obsolete
0 - WHS 3

MOQ : 2000
Multiples : 2000

Stock Image

DLA11C-TR-E
ON Semiconductor

2000 : USD 0.2191
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Vr - Reverse Voltage
Type
Vf - Forward Voltage
Ir - Reverse Current
Recovery Time
Series
Packaging
Product
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Ordering number : ENN2795B DLA11C Silicon Diffused Junction Type DLA11C 1.1A Ultrahigh-Speed Rectifier Features Package Dimensions Supports automatic mounting and permits DLA11C- unit : mm applied sets to be made smaller. 1188 Fast reverse recovery time and small switching loss. DLA11C Peak reverse voltage : V =200V. RM Cathode mark 0.1 Average rectified current : I =1.1A. O 5.0 1.2 1.2 Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Peak Reverse Voltage V 200 V RM 50Hz sine wave, mounted on alumina board 1.1 A Average Rectified Current I O Resistive load resistor, mounted on PCB 0.84 A Surge Forward Current I 50Hz sine wave, nonrepetitive, 1 cycle peak value 30 A FSM Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Forward Voltage V I =1.1A 0.98 V F F Reverse Current I V =200V 10 A R R Reverse Recovery Time t I =0.5A, I =1A 50 ns rr F R j-l JunctionLead 23 C / W Thermal Resistance JunctionAmbient Mounted on alumina board 108 C / W j-a Mounted on PCB 157 C / W Marking : LA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22004 TS IM / 53098 HA (KT) / 92295 GI (KOTO) / 5108 TA, TS No.2795-1/3 0.2 1.5 0.9 2.5 2.0DC D=0.5 Sine wave DLA11C Reverse Recovery Time Test Circuit I F D.U.T 0 0.1 I I R R R t rr I -- V I -- n F F FSM 10 35 50Hz 7 30 5 3 25 2 20 1.0 7 15 5 10 3 2 5 0 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 23 5 7 23 5 7 1.0 10 100 Forward Voltage, V -- V IT06210 Number of Cycles at 50Hz, n IT06211 F I -- Ta O 1.4 Resistive load Mounted on alumina board 1.2 I O tp 1.0 T 0.8 0.2 D=tp / T 0.6 0.05 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT06212 No.2795-2/3 25C Ta=150C Average Rectified Current, I -- A Forward Current, I -- A O F CRO Surge Forward Current, I -- A FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
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FAIRCHILD (ON SEMICONDUCTOR)
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FS8
FSC
ON
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ON Semiconductor / Fairchild
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