Product Information

DCA010-TB-E

DCA010-TB-E electronic component of ON Semiconductor

Datasheet
ON Semiconductor Diodes - General Purpose, Power, Switching DUAL COMMON ANODE SW DI

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 4579
Multiples : 4579

Stock Image

DCA010-TB-E
ON Semiconductor

4579 : USD 0.0948
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

DCA010-TB-E
ON Semiconductor

1 : USD 0.4333
10 : USD 0.3032
100 : USD 0.1394
1000 : USD 0.1073
3000 : USD 0.0915
9000 : USD 0.0829
24000 : USD 0.0814
45000 : USD 0.0814
99000 : USD 0.0793
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Peak Reverse Voltage
Max Surge Current
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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DCA010 Very High-Speed Switching Diode www.onsemi.com Features Ideally suited for use in hybrid ICs because of very small-sized package Fast switching speed Small interterminal capacitance Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Raitings Unit Peak Reverse Voltage V 85 V RM Reverse Voltage V 80 V R Unit rating 300 mA Peak Forward Current I FM Total rating 450 mA Unit rating 100 mA Average Rectified Current I O Total rating 150 mA Unit rating 4 A Surge Current(1s) I FSM Total rating 6 A Allowable Power Dissipation P 200 mW Junction Temperature Tj 125 C Storage Temperature Tstg --55to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. at Ta=25C Electrical Characteristics Raitings Parameter Symbol Conditions Unit min typ max V I =1mA 0.61 V F1 F Forward Voltage V I =10mA 0.74 V F2 F V I =100mA 1.20 V F3 F I V =30V 0.1 A R1 R Reverse Current I V =80V 0.5 A R2 R Interterminal Capacitance C V =0V, f=1MHz 4.0 pF R Reverse Recovery Time t I =10mA, V =6V, R =50W, I =0.1Irp 4.0 ns rr F R L rr Marking:W5 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Reverse Recovery Time Test Circuit Package Dimensions 0.01F DUT 0.1Irp I =10mA F unit:mm(typ.) 0 2kW 50W 50W Irp --6V 50ns t rr Electrical Connection Anode 1 : Cathode 3 2 : Cathode 3 : Anode CP 1 2 (Top view) Cathode Cathode ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 Publication Order Nunber: 1 December 2014 - Rev. 0 DCA010/DDCA010 I -- V I -- V F F R R 3 10 10 5 5 2 2 2 10 1.0 5 5 2 10 2 5 --1 10 2 5 1.0 5 2 --2 2 10 --1 10 5 5 2 2 --2 --3 10 10 0 0.2 0.4 0.6 0.8 1.0 1.2 020406080 100 Forward Voltage, V -- V IT02033 Reverse Voltage, V -- V IT02034 F R t -- I C -- V rr F R 100 3.0 f=1MHz 7 5 2.5 3 2 2.0 10 7 1.5 5 3 1.0 2 0.5 1.0 7 5 0 2 35 2 35 2 35 23 5 23 5 2352 0.1 1.0 10 100 0.1 1.0 10 100 Forward Current, I -- mA IT02035 Reverse Voltage, V -- V IT02036 F R ORDERING INFORMATION Device Package Shipping memo DCA010-TB-E CP 3,000 pcs. / reel Pb-Free www.onsemi.com 2 50C 25C 75C Ta=100C Ta=100C 25C --25C Reverse Recovery Time, t -- ns Forward Current, I -- mA rr F Interterminal Capacitance, C -- pF Reverse Current, I -- A R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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