Product Information

CAV24M01WE-GT3

CAV24M01WE-GT3 electronic component of ON Semiconductor

Datasheet
EEPROM Serial-I2C 1M-bit 128K x 8 3.3V/5V Automotive 8-Pin SOIC N T/R

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.875 ea
Line Total: USD 2625

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

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CAV24M01WE-GT3
ON Semiconductor

3000 : USD 0.875

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

CAV24M01WE-GT3
ON Semiconductor

3000 : USD 2.9751

     
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CAV24M01 2 1 Mb I C CMOS Serial EEPROM Description The CAV24M01 is a 1024 kb Serial CMOS EEPROM, internally organized as 131,072 words of 8 bits each. CAV24M01 MARKING DIAGRAMS M01C AYMXXX 24M01A AYMXXX (TSSOP8) M01C = Specific Device Code (SOIC8) A = Assembly Location 24M01A = Specific Device Code Y = Production Year (Last Digit) A = Assembly Location M = Production Month (19, O, N, D) Y = Production Year (Last Digit) XXX = Last Three Digits of M = Production Month (19, O, N, D) = Assembly Lot Number XXX = Last Three Digits of = PbFree Microdot XXX = Assembly Lot Number Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Notes 3, 4) Endurance 1,000,000 Program/Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Test Condition: Page Mode, V = 5 V, 25C. CC 4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte has to be written, 4 bytes (including the ECC bits) are re-programmed. It is recommended to write by multiple of 4 bytes in order to benefit from the maximum number of write cycles. Table 3. D.C. OPERATING CHARACTERISTICS V = 2.5 V to 5.5 V, T = 40C to +125C, unless otherwise specied. CC A Symbol Parameter Test Conditions Min Max Units I Read Current Read, f = 400 kHz / 1 MHz 1 mA CCR SCL I Write Current V = 5.5 V 5.0 mA CCW CC I Standby Current All I/O Pins at GND or V T = 40C to +125C 5 A SB CC A I I/O Pin Leakage Pin at GND or V T = 40C to +125C 2 A L CC A V Input Low Voltage 0.5 0.3 V V IL1 CC V Input High Voltage 0.7 V V + 0.5 V IH1 CC CC V Output Low Voltage I = 3.0 mA 0.4 V OL1 OL

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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