Product Information

BTB16-800CW3G

BTB16-800CW3G electronic component of ON Semiconductor

Datasheet
ON Semiconductor Triacs 16A 35mA 800V IGT 3 QUAD

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.5747 ea
Line Total: USD 2.57

115 - Global Stock
Ships to you between
Tue. 21 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
58 - WHS 1


Ships to you between Tue. 21 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

BTB16-800CW3G
ON Semiconductor

1 : USD 0.828
10 : USD 0.8223

     
Manufacturer
Product Category
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Off State Leakage Current Vdrm Idrm
On State Voltage
Package Case
Rated Repetitive Off State Voltage Vdrm
Brand
Gate Trigger Current Igt
Gate Trigger Voltage Vgt
Non Repetitive On State Current
Factory Pack Quantity :
Rohs Mouser
Off-State Leakage Current Vdrm Idrm
Cnhts
Hts Code
Product Type
Subcategory
Taric
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Thyristors Surface Mount 800V > BTB16-600BW3G, BTB16-800BW3G Pb BTB16-600CW3G, BTB16-800CW3G Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking Voltage to 800 V On-State Current Rating of 16 Amperes RMS at 25C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dV/dt 1000 V/s minimum at 125C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package High Commutating dI/dt 8.5 A/ms minimum at 125C Pin Out These are PbFree Devices Functional Diagram MT2 MT1 G CASE 221A STYLE 4 1 2 Additional Information Samples Datasheet Resources 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17Thyristors Surface Mount 800V > BTB16-600BW3G, BTB16-800BW3G Maximum Ratings (T = 25C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive Off-State Voltage (Note 1) V , DRM (Gate Open, Sine Wave 50 to 60 Hz, T = -40 to 125C) J V V RRM 600 BTB16600CW3G 800 BTB16800CW3G On-State RMS Current (Full Cycle Sine Wave, 60 Hz, T = 80C) I 16 A C T (RMS) Peak Non-Repetitive Surge Current I 170 A TSM (One Full Cycle Sine Wave, 60 Hz, T = 25C) C 2 Circuit Fusing Consideration (t = 8.3 ms) I t 144 Asec NonRepetitive Surge Peak OffState Voltage V / V V / V V DSM RSM DSM RSM (T = 25C, t = 10 ms) +100 J Peak Gate Current (T = 125C, t = 20ms) I 4.0 W J GM Peak Gate Power (Pulse Width 1.0 s, T = 80C) P 20 W C GM Average Gate Power (T = 125C) P 1.0 W J G(AV) Operating Junction Temperature Range T -40 to +125 C J Storage Temperature Range T -40 to +125 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative DRM RRM potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit R Thermal Resistance, JunctiontoCase (AC) 1.9 8JC C/W JunctiontoAmbient 60 R 8JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 260 C T L 10 seconds 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17

Tariff Desc

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