BF245A/BF245B/BF245C BF245A/BF245B/BF245C N-Channel Amplifiers This device is designed for VHF/UHF amplifiers. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings T =25C unless otherwise noted a Symbol Parameter Value Units V Drain-Gate Voltage 30 V DG V Gate-Source Voltage -30 V GS I Forward Gate Current 10 mA GF P Total Device Dissipation T =25C 350 mW D A Derate above 25C 2.8 mW/C T T Operating and Storage Junction Temperature Range - 55 ~ 150 C J, STG Electrical Characteristics T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Gate-Source Breakdown Voltage V = 0, I = 1A-30 V (BR)GSS DS G V Gate-Source BF245A V = 15V, I = 200A-0.4 -2.2 V GS DS D BF245B -1.6 -3.8 BF245C -3.2 -7.5 V (off) Gate-Source Cut-off Voltage V = 15V, I = 10nA -0.5 -8 V GS DS D I Gate Reverse Current V = -20V, V = 0 -5 nA GSS GS GS On Characteristics I Zero-Gate Voltage Drain Current DSS BF245A V = 15V, V = 0 2 6.5 mA GS GS BF245B 6 15 BF245C 12 25 On Characteristics g Common Source Forward V = 15V, V = 0, f = 1KHz 3 6.5 mmhos fs GS GS Transconductance 2003 Fairchild Semiconductor Corporation Rev. A1, June 2003BF245A/BF245B/BF245C Package Dimensions TO-92 +0.25 4.58 0.15 0.46 0.10 +0.10 1.27TYP 1.27TYP 0.38 0.05 1.27 0.20 1.27 0.20 3.60 0.20 (R2.29) Dimensions in Millimeters 2003 Fairchild Semiconductor Corporation Rev. A1, June 2003 3.86MAX 1.02 0.10 +0.10 0.38 0.05 (0.25) 14.47 0.40 4.58 0.20