Product Information

BAT54XV2T1H

BAT54XV2T1H electronic component of ON Semiconductor

Datasheet
Schottky Diodes & Rectifiers SCHOTTKY DIODE SOD52
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0395 ea
Line Total: USD 118.5

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 3000
Multiples : 3000

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BAT54XV2T1H
ON Semiconductor

3000 : USD 0.0396
6000 : USD 0.0391
9000 : USD 0.0387
12000 : USD 0.0384
15000 : USD 0.038
24000 : USD 0.0376
30000 : USD 0.0372
75000 : USD 0.0369
150000 : USD 0.0365

0 - WHS 2


Ships to you between Thu. 09 May to Wed. 15 May


Multiples : 1

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BAT54XV2T1H
ON Semiconductor


0 - WHS 3


Ships to you between Wed. 15 May to Fri. 17 May

MOQ : 1
Multiples : 1

Stock Image

BAT54XV2T1H
ON Semiconductor

1 : USD 0.7508
10 : USD 0.6136
100 : USD 0.136
500 : USD 0.0859
1000 : USD 0.059
3000 : USD 0.0445

0 - WHS 4


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 12000
Multiples : 12000

Stock Image

BAT54XV2T1H
ON Semiconductor

12000 : USD 0.0883

Read More Specifications

     
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Additional Infomation About Product

BAT54XV2 Schottky Barrier Diodes These Schottky barrier diodes are designed for highspeed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for handheld and portable applications where space is limited. www.onsemi.com Features 30 VOLT Extremely Fast Switching Speed Low Forward Voltage 0.35 V (Typ) I = 10 mA SILICON HOTCARRIER F S Prefix for Automotive and Other Applications Requiring Unique DETECTOR AND SWITCHING Site and Control Change Requirements AECQ101 Qualified and DIODES PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 2 Compliant CATHODE ANODE 2 SOD523 MAXIMUM RATINGS (T = 125C unless otherwise noted) CASE 502 J 1 Rating Symbol Value Unit Reverse Voltage V 30 V R MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit JVM Total Device Dissipation FR5 Board, P 200 mW 1 D (Note 1) T = 25C A JV = Device Code Derate above 25C 1.57 mW/C M = Date Code* Forward Current (DC) I 200 Max mA F = PbFree Package (Note: Microdot may be in either location) NonRepetitive Peak Forward I 600 mA FSM Current, t < 10 msec p *Date Code orientation may vary depending up- on manufacturing location. Repetitive Peak Forward Current I 300 mA FRM Pulse Wave = 1 sec, Duty Cycle = 66% Thermal Resistance, R 635 C/W JA JunctiontoAmbient ORDERING INFORMATION Junction and Storage Temperature T , T 55 to 125 C J stg Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the BAT54XV2T1G SOD523 3000 / Tape & device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (PbFree) Reel 1. FR4 Minimum Pad. BAT54XV2T5G SOD523 8000 / Tape & (PbFree) Reel SBAT54XV2T1G SOD523 3000 / Tape & (PbFree) Reel SBAT54XV2T5G SOD523 8000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2018 Rev. 12 BAT54XV2T1/DBAT54XV2 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V 30 V (BR)R (I = 10 A) R Total Capacitance C 7.6 10 pF T (V = 1.0 V, f = 1.0 MHz) R Reverse Leakage I 0.3 2.0 A R (V = 25 V) R Forward Voltage V V F (I = 0.1 mA) 0.22 0.24 F (I = 1.0 mA) 0.28 0.32 F (I = 10 mA) 0.35 0.40 F (I = 30 mA) 0.39 0.50 F (I = 100 mA) 0.46 0.80 F Reverse Recovery Time t 5.0 ns rr (I = I = 10 mA, I = 1.0 mA) Figure 1 F R R(REC) 820 +10 V 2 k 0.1 F I F t t t p I F 100 H r t t 10% 0.1 F rr DUT 90% 50 Output 50 Input i = 1 mA Pulse Sampling R(REC) I R Generator Oscilloscope V R OUTPUT PULSE INPUT SIGNAL (I = I = 10 mA measured F R at i = 1 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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