Product Information

BAS19LT3G

BAS19LT3G electronic component of ON Semiconductor

Datasheet
Diodes - General Purpose, Power, Switching 120V 200mA
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

13889: USD 0.0303 ea
Line Total: USD 420.84

0 - Global Stock
MOQ: 13889  Multiples: 13889
Pack Size: 13889

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 60000
Multiples : 60000

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BAS19LT3G
ON Semiconductor

60000 : USD 0.0147

0 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 13889
Multiples : 13889

Stock Image

BAS19LT3G
ON Semiconductor

13889 : USD 0.0303

0 - WHS 3


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

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BAS19LT3G
ON Semiconductor

1 : USD 0.351
10 : USD 0.3321
100 : USD 0.0995
500 : USD 0.0454
1000 : USD 0.0313
2500 : USD 0.0238
10000 : USD 0.0195
20000 : USD 0.0173
50000 : USD 0.014

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Qualification
Packaging
Height
Length
Operating Temperature Range
Width
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Additional Infomation About Product

BAS19L, BAS20L, BAS21L, BAS21DW5 High Voltage Switching Diode Features www.onsemi.com These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant S and NSV Prefixes for Automotive and Other Applications HIGH VOLTAGE Requiring Unique Site and Control Change Requirements SWITCHING DIODE AECQ101 Qualified and PPAP Capable SOT23 MAXIMUM RATINGS 3 1 Rating Symbol Value Unit CATHODE ANODE Continuous Reverse Voltage V Vdc R 120 BAS19 SC88A 200 BAS20 5 1 250 BAS21 CATHODE ANODE Repetitive Peak Reverse Voltage V Vdc 4 3 RRM 120 BAS19 CATHODE ANODE 200 BAS20 250 BAS21 MARKING DIAGRAMS Continuous Forward Current I 200 mAdc F 3 Peak Forward Surge Current I 2 A FSM 3 (1/2 Cycle, Sine Wave, 60 Hz) 1 Jx M Repetitive Peak Forward Current I 0.6 A FRM 2 (Pulse Train: T = 1 s, T = 0.5 s) ON OFF 1 2 SOT23 (TO236) Junction and Storage Temperature T , T 55 to +150 C J stg CASE 318 Range STYLE 8 Power Dissipation (Note 1) P 385 mW D 5 4 Electrostatic Discharge ESD HM < 500 V Jx M MM < 400 V 3 1 Stresses exceeding those listed in the Maximum Ratings table may damage the 1 2 3 device. If any of these limits are exceeded, device functionality should not be SC88A (SOT353) assumed, damage may occur and reliability may be affected. CASE 419A 1. Mounted on FR5 Board = 1.0 x 0.75 x 0.062 in. x = P, R, or S P = BAS19L R = BAS20L S = BAS21L or BAS21DW5 M = Date Code = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon the manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Semiconductor Components Industries, LLC, 1999 1 Publication Order Number: November, 2016 Rev. 18 BAS19LT1/DBAS19L, BAS20L, BAS21L, BAS21DW5 THERMAL CHARACTERISTICS (SOT23) Characteristic Symbol Max Unit Total Device Dissipation FR5 Board P 225 mW D (Note 2) T = 25C A 1.8 mW/C Derate above 25C Thermal Resistance R JA 556 C/W JunctiontoAmbient (SOT23) Total Device Dissipation Alumina Substrate P 300 mW D (Note 3) T = 25C A 2.4 mW/C Derate above 25C Thermal Resistance JunctiontoAmbient R 417 C/W JA Junction and Storage T , T J stg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS (SC88A) Characteristic Symbol Max Unit Power Dissipation (Note 4) P 385 mW D Thermal Resistance R JA JunctiontoAmbient 328 C/W Derate Above 25C 3.0 mW/C Maximum Junction Temperature T 150 C Jmax Operating Junction and Storage Temperature Range T , T 55 to +150 C J stg 2. FR5 = 1.0 0.75 0.062 in. 3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 4. Mounted on FR5 Board = 1.0 x 0.75 x 0.062 in. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit Reverse Voltage Leakage Current I Adc R (V = 100 Vdc) BAS19 0.1 R (V = 150 Vdc) BAS20 0.1 R (V = 200 Vdc) BAS21 0.1 R (V = 100 Vdc, T = 150C) BAS19 100 R J (V = 150 Vdc, T = 150C) BAS20 100 R J (V = 200 Vdc, T = 150C) BAS21 100 R J Reverse Breakdown Voltage V Vdc (BR) 120 (I = 100 Adc) BAS19 BR 200 (I = 100 Adc) BAS20 BR 250 (I = 100 Adc) BAS21 BR Forward Voltage V Vdc F (I = 100 mAdc) 1.0 F (I = 200 mAdc) 1.25 F Diode Capacitance (V = 0, f = 1.0 MHz) C 5.0 pF R D Reverse Recovery Time (I = I = 30 mAdc, I = 3.0 mAdc, R = 100) t 50 ns F R R(REC) L rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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