Field Stop Trench IGBT 40 A, 650 V AFGHL40T65SQ Using the novel field stop 4th generation high speed IGBT technology. AFGHL40T65SQ which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in www.onsemi.com automotive application. It is a standalone IGBT. Features AECQ101 Qualified 40 A, 650 V Maximum Junction Temperature: T = 175C J V = 1.6 V CESat Positive Temperature Coefficient for Easy Parallel Operating High Current Capability C Low Saturation Voltage: V = 1.6 V (Typ.) I = 40 A CE(Sat) C 100% of the Parts are Tested for I (Note 2) LM Fast Switching Tight Parameter Distribution G RoHS Compliant E Typical Applications Automotive HEVEV Onboard Chargers Automotive HEVEV DCDC Converters Totem Pole Bridgeless PFC PTC G MAXIMUM RATINGS C Rating Symbol Value Unit E TO2473L CollectortoEmitter Voltage V 650 V CES CASE 340CX GatetoEmitter Voltage V 20 V GES Transient GatetoEmitter Voltage 30 MARKING DIAGRAM Collector Current (Note 1) T = 25C I 80 A C C T = 100C 40 C Pulsed Collector Current (Note 2) I 160 A LM Pulsed Collector Current (Note 3) I 160 A CM &Z&3&K AFGHL Maximum Power Dissipation T = 25C P 239 W C D 40T65SQ T = 100C 119 C Operating Junction T , T 55 to C J STG / Storage Temperature Range +175 Maximum Lead Temp. for Soldering T 300 C L Purposes, 1/8 from case for 5 seconds &Z = Assembly Plant Code Stresses exceeding those listed in the Maximum Ratings table may damage the &3 = 3Digit Date Code device. If any of these limits are exceeded, device functionality should not be &K = 2Digit Lot Traceability Code assumed, damage may occur and reliability may be affected. 1. Value limit by bond wire AFGHL40T65SQ = Specific Device Code 2. V = 400 V, V = 15 V, I = 160 A, R = 15 , Inductive Load CC GE C G 3. Repetitive Rating: pulse width limited by max. Junction temperature ORDERING INFORMATION Device Package Shipping AFGHL40T65SQ TO 247 3L 30 Units / Rail Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: January, 2020 Rev. 1 AFGHL40T65SQ/DAFGHL40T65SQ THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.63 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS Collectoremitter breakdown voltage, V = 0 V, BV 650 V GE CES gateemitter shortcircuited I = 1 mA C Temperature Coefficient of V = 0 V, 0.6 V/C GE BV CES Breakdown Voltage I = 1 mA C T J Collectoremitter cutoff current, V = 0 V, I 250 A GE CES gateemitter shortcircuited V = 650 V CE Gate leakage current, collector V = 20 V, I 400 nA GE GES emitter shortcircuited V = 0 V CE ON CHARACTERISTICS Gateemitter threshold voltage V = V , I = 40 mA V 3.4 4.9 6.4 V GE CE C GE(th) Collectoremitter saturation voltage V = 15 V, I = 40 A V 1.6 2.1 V GE C CE(sat) V = 15 V, I = 40 A, T = 175C 1.95 GE C J DYNAMIC CHARACTERISTICS Input capacitance V = 30 V, C 2312 pF CE ies V = 0 V, GE Output capacitance C 30 oes f = 1 MHz Reverse transfer capacitance C 8 res Gate charge total V = 400 V, Q 68 nC CE g I = 40 A, C Gatetoemitter charge Q 13 ge V = 15 V GE Gatetocollector charge Q 16 gc SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turnon delay time T = 25C, t 15 ns C d(on) V = 400 V, CC Rise time t 10 I = 20 A, r C R = 6 , G Turnoff delay time t 70 d(off) V = 15 V, GE Inductive Load, Fall time t 3 f FWD: AFGHL40T65SQD Turnon switching loss E 0.25 mJ on Turnoff switching loss E 0.09 off Total switching loss E 0.34 ts Turnon delay time T = 25C, t 17 ns C d(on) V = 400 V, CC Rise time t 22 r I = 40 A, C R = 6 , G Turnoff delay time t 67 d(off) V = 15 V, GE Inductive Load, Fall time t 31 f FWD: AFGHL40T65SQD Turnon switching loss E 0.75 mJ on Turnoff switching loss E 0.29 off Total switching loss E 1.04 ts www.onsemi.com 2