Product Information

2N6508TG

2N6508TG electronic component of ON Semiconductor

Datasheet
ON Semiconductor SCRs 25A 600V

Manufacturer: ON Semiconductor
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Price (USD)

1: USD 1.863 ea
Line Total: USD 1.86

905 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
905 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

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2N6508TG
ON Semiconductor

1 : USD 1.863
10 : USD 1.61
100 : USD 1.38
1000 : USD 1.3685

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Series
Breakover Current IBO Max
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Non Repetitive On-State Current
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Thyristors Datasheet 2N6504 Series SCRs-25 AMPERES RMS 50 - 800V Pb Description The 2N6504 is designed primarily for half-wave AC control applications, such as motor controls, heating controls and power supply crowbar circuits. Features Glass Passivated Junctions Blocking Voltage to 800 Volts for Greater Parameter 300 A Surge Current Uniformity and Stability Capability Small, Rugged, Thermowatt PbF ree Package is Available Construction for Low Thermal Resistance, High Heat Dissipation and Durability Functional Diagram Additional Information G A K Resources Accessories Samples Pin Out 4 TO-220AB Case 221A Style 4 1 2 3 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 06/03/21Thyristors Datasheet 2N6504 Series SCRs-25 AMPERES RMS 50 - 800V Maximum Ratings (T = 25C unless otherwise noted) J Rating Symbol Value Unit 2N6504 50 2N6505 100 Peak Repetitive Off-State Voltage (Note 1) V , DRM 2N6507 400 V (Gate Open, Sine Wave 50 to 60 Hz, T = 25 to 125C) V J RRM 2N6508 600 2N6509 800 On-State RMS Current (180 Conduction Angles T = 85C) I 25 A C T (RMS) Average On-State Current (180 Conduction Angles T = 85C) I 16 A C T (AV) Peak Non-repetitive Surge Current I 250 A TSM (1/2 Cycle, Sine Wave 60 Hz, T = 100C) J Forward Peak Gate Power (Pulse Width 1.0 s, T = 85C) P 20 W C GM Forward Average Gate Power (t = 8.3 ms, T = 85C) P 0.5 W C G(AV) Forward Peak Gate Current (Pulse Width 1.0 s, T = 85C) I 2.0 A C GM Operating Junction Temperature Range T -40 to +125 C J Storage Temperature Range T -40 to +150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages DRM RRM shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit *Thermal Resistance, Junction to Case R 1.5 C/W JC *Maximum Lead Temperature for Soldering Purposes, 1/8 from case for T 260 C L 10 seconds * Indicates JEDEC Registered Data. Electrical Characteristics - OFF (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit - - 10 A Peak Repetitive Blocking Current T = 25C I , J DRM (V = V = V Gate Open) T = 125C I - - 2.0 mA AK DRM RRM J RRM Electrical Characteristics - ON (T = 25C unless otherwise noted Electricals apply in both directions) C Characteristic Symbol Min Typ Max Unit * Forward On-State Voltage (Note 2) (ITM = 50 A) V 1.8 V TM 9.0 30 * Gate Trigger Current (Continuous dc) T = 25C C I mA GT (V = 12 V , RL = 100 ) T = -40C 75 AK dc C * Gate Trigger Voltage (Continuous dc) (V = 12 Vdc, R = 100 , T = -40 C) V 1.0 1.5 V AK L C GT Gate Non-Trigger Voltage (V = 12 Vdc, R = 100 , T = 125C) V 0.2 V AK L J GD - 18 40 *Holding Current (V = 12 Vdc, T = 25C D C I mA H Initiating Current = 200 mA, Gate Open) T = -40C - - 80 C * Turn-On Time (I = 25 A, I = 50 mAdc) t - 1.5 2.0 s TM GT gt (I = 25 A, I = 25 A) t - 15 - s TM R q Turn-Off Time (V = rated voltage) DRM o (I = 25 A, I = 25 A, T = 125 C) t - 35 - s TM R J q *Indicates JEDEC Registered Data 2. Pulse Test: Pulse Width 300 sec, Duty Cycle 2%. 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 06/03/21

Tariff Desc

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