Product Information

1N3064

1N3064 electronic component of ON Semiconductor

Datasheet
1N3064 1N3064

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0277 ea
Line Total: USD 0.03

970 - Global Stock
Ships to you by
Tue. 30 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
970 - Warehouse 1


Ships to you by Tue. 30 Apr

MOQ : 1
Multiples : 1

Stock Image

1N3064
ON Semiconductor

1 : USD 0.0277
25 : USD 0.0139
50 : USD 0.0125
75 : USD 0.0104
100 : USD 0.0094

     
Manufacturer
Product Category
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Brand
Operating Temperature Range
Factory Pack Quantity :
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1N3064 Small Signal Diode December 2004 1N3064 Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * T = 25C unless otherwise noted a Symbol Parameter Value Unit V Maximum Repetitive Reverse Voltage 75 V RRM I Average Rectified Forward Current 300 mA F(AV) I Non-repetitive Peak Forward Surge Current FSM Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0 microsecond 4.0 A T Storage Temperature Range -65 to +200 C STG T Operating Junction Temperature 175 C J * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter Value Unit P Power Dissipation 500 mW D R Thermal Resistance, Junction to Ambient 300 C/W JA Electrical Characteristics T = 25C unless otherwise noted C Symbol Parameter Conditions Min. Max Units V Breakdown Voltage I = 5A75 V R R V Forward Voltage I = 250 A 505 575 mV F F I = 1mA 550 650 mV F I = 2mA 610 710 mV F I = 10mA 1.0 V F I Reverse Leakage V = 50V 100 nA R R V = 50V, T = 150C 100 A R A C Total Capacitance V = 0, f = 1.0MHz 2 pF T R t Reverse Recovery Time I = I = 10mA, R = 100 , I = 1mA 4 ns rr F R L rr 2004 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com 1N3064 Rev. AT50 = 25.40 MIN (2X) T26 = 14.00 MIN (2X) 4.56 3.05 0.533 NOTES: UNLESS OTHERWISE SPECIFIED 0.460 A) PACKAGE STANDARD REFERENCE: JEDEC DO-204, VARIATION AH. B) HERMETICALLY SEALED GLASS PACKAGE. C) PACKAGE WEIGHT IS 0.137 GRAM. D) ALL DIMENSIONS ARE IN MILLIMETERS. E) DRAWING FILE NAME: DO35AREV03 1.91 1.53

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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