EE-SY413

Photomicrosensor (Reflective) EE-SY313/-SY413 Be sure to read Precautions on page 24. Dimensions Features Incorporates an IC chip with a built-in detector element and ampli- Note: All units are in millimeters unless otherwise indicated. fier. Incorporates a detector element with a built-in temperature com- Five, 0.5 pensation circuit. Compact reflective Photomicrosensor (EE-SY310/-SY410) with a molded housing and a dust-tight cover. A wide supply voltage range: 4.5 to 16 VDC Directly connects with C-MOS and TTL. Dark ON model (EE-SY313) Light ON model (EE-SY413) Recommended sensing distance = 4.4 mm Absolute Maximum Ratings (Ta = 25C) Item Symbol Rated value Emitter Forward current I 50 mA (see note 1) F 15 to 18 Reverse voltage V 4 V R 17 to 24 Pulse forward I 1 A FP current (see note 2) Detector Power supply V 16 V CC Internal Circuit voltage A V Output voltage V 28 V OUT O Output current I 16 mA OUT Unless otherwise specified, the Permissible P 250 mW (see note 1) K G OUT tolerances are as shown below. output dissipa- tion Terminal No. Name Dimensions Tolerance Ambient tem- Operating Topr 40C to 65C A Anode 3 mm max. 0.3 perature Storage Tstg 40C to 85C K Cathode 3 < mm 6 0.375 Soldering temperature Tsol 260C V Power supply (see note 3) 6 < mm 10 0.45 (Vcc) 10 < mm 18 0.55 Note: 1. Refer to the temperature rating chart if the ambient temper- O Output (OUT) ature exceeds 25C. 18 < mm 30 0.65 G Ground (GND) 2. The pulse width is 10 s maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 20 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wave- 920 nm typ. I = 20 mA P F length Detector Low-level output voltage V 0.12 V typ., 0.4 V max. Vcc = 4.5 to 16 V, I = 16 mA, without incident light (EE- OL OL SY313), with incident light (EE-SY413) (see notes 1 and 2) High-level output volt- V 15 V min. Vcc = 16 V, R = 1 k, with incident light (EE-SY313), with- OH L age out incident light (EE-SY413) (see notes 1 and 2) Current consumption I 3.2 mA typ., 10 mA max. Vcc = 16 V CC Peak spectral sensitivity 870 nm typ. V = 4.5 to 16 V P CC wavelength LED current when output is OFF I 10 mA typ., 20 mA max. V = 4.5 to 16 V FT CC LED current when output is ON Hysteresis H 17% typ. V = 4.5 to 16 V CC Response frequency f 50 pps min. V = 4.5 to 16 V, I = 20 mA, I = 16 mA CC F OL Response delay time t (t )3 s typ. V = 4.5 to 16 V, I = 20 mA, I = 16 mA PLH PHL CC F OL Response delay time t (t ) 20 s typ. V = 4.5 to 16 V, I = 20 mA, I = 16 mA PHL PLH CC F OL 168 EE-SY313/-SY413 Photomicrosensor (Reflective)Note: 1. With incident ligh denotes the condition whereby 4. The value of the response frequency is measured by rotating the light reflected by white paper with a reflection the disk as shown below. factor of 90% at a sensing distance of 4.4 mm is received by the photo IC when the forward current (IF) of the LED is 20 mA. 200 mm dia. 15 mm 2. Sensing object: White paper with a reflection factor of 90% at a sensing distance of 4.4 mm. 15 mm 15 mm 3. Hysteresis denotes the difference in forward LED current value, expressed in percentage, calculated 4.4 mm from the respective forward LED currents when the 5. The following illustrations show the definition of response delay photo IC is turned from ON to OFF and when the time. The value in the parentheses applies to the EE-SY413. photo IC is turned from OFF to ON. Input Input Output Output (tPLH) (tPHL)((tPHL)tPLH) EE-SY313 EE-SY413 Engineering Data Note: The values in the parentheses apply to the EE-SY413. Forward Current vs. Collector Forward Current vs. Forward LED Current vs. Supply Voltage Dissipation Temperature Rating Voltage Characteristics (Typical) (Typical) Ta = 25C R = 1 k L I OFF (I ON) Ta = 30C FT FT Ta = 25C Ta = 70C I ON (I OFF) FT FT Supply voltage V (V) Forward voltage V (V) CC Ambient temperature Ta (C) F LED Current vs. Ambient Low-level Output Voltage vs. Low-level Output Voltage vs. Temperature Characteristics Output Current (Typical) Ambient Temperature (Typical) Characteristics (Typical) Ta = 25C V = 5 V CC V = 5 V CC V = 5 V R = 330 CC L I = 0 mA (20 mA) F I = 0 mA (20 mA) F I OFF (I ON) FT FT I = 16 mA OL I ON (I OFF) FT FT I = 5 mA OL Output current I (mA) Ambient temperature Ta (C) Ambient temperature Ta (C) C Current Consumption vs. Supply Response Delay Time vs. Forward Sensing Position Characteristics Voltage (Typical) Current (Typical) (Typical) I = 20 mA F VCC = 5 V V = 5 V CC Ta = 25C Ta = 25C R = 330 I = 0 mA (15 mA) L F Sensing object: White Ta = 25C paper with a reflection VOUT factor of 90% (EE-SY3 ) VOUT (EE-SY4 ) tPHL (tPLH) Operate Release tPLH (tPHL) Supply voltage V (V) Distance d (mm) CC 1 Forward current I (mA) F EE-SY313/-SY413 Photomicrosensor (Reflective) 169 Current consumption Icc (mA) LED current I (mA) FT Forward current I (mA) F Output allowable dissipation P (mW) C Low level output voltage V (V) OL Response delay time t , t (s) PHL PLH Forward current I (mA) F Distance d (mm) 2 Low level output voltage V (V) OL LED current I (mA) FT