Product Information

EE-SF5

EE-SF5 electronic component of Omron

Datasheet
Optical Switches, Reflective, Phototransistor Output REFL. SOLDER TERM.

Manufacturer: Omron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.147 ea
Line Total: USD 4.15

138 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
210 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 5
Multiples : 5

Stock Image

EE-SF5
Omron

5 : USD 10.825
50 : USD 5.85
200 : USD 5.05
400 : USD 4.8125
600 : USD 4.8
1000 : USD 4.775
2600 : USD 4.75
5000 : USD 4.725

138 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

EE-SF5
Omron

1 : USD 4.147
5 : USD 3.497
13 : USD 3.315
500 : USD 3.185

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Sensing Distance
Collector- Emitter Voltage VCEO Max
Maximum Collector Current
Maximum Operating Temperature
Minimum Operating Temperature
Mounting Style
Series
Vf - Forward Voltage
Vr - Reverse Voltage
Height
Length
Output Type
Sensing Method
Termination Style
Wavelength
Width
Brand
Number Of Channels
Cnhts
Fall Time
Hts Code
If - Forward Current
Mxhts
Pd - Power Dissipation
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
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Photomicrosensor (Reflective) EE-SF5(-B) Dimensions Features Dust-tight construction. Note: All units are in millimeters unless otherwise indicated. With a visible-light intercepting filter which allows objects to be sensed without being greatly influenced by the light radiated from fluorescent lamps. Matted Mounted with M2 screws. Model with soldering terminals (EE-SF5). Model with PCB terminals (EE-SF5-B). 1.9 dia. 2.20.2 dia. hole RoHS Compliant. Absolute Maximum Ratings (Ta = 25C) Item Symbol Rated value Four, 1.5 Emitter Forward current I 50 mA (see note 1) Four, 7.61 F 0.5 Four, 0.25 Pulse forward current I 1 A (see note 2) FP 2.54 Reverse voltage V 4 V R 7.620.3 2.540.2 Detector CollectorEmitter V 30 V CEO voltage EE-SF5 EE-SF5-B EmitterCollector V --- ECO voltage Collector current I 20 mA C Internal Circuit Collector dissipation P 100 mW (see note 1) C A C Unless otherwise specified, the Ambient Operating T 25 C to 80C opr tolerances are as shown below. temperature 30 C to 80C Storage T stg K E Dimensions Tolerance Soldering temperature T 260 C (see note 3) sol 3 mm max. 0.3 Terminal No. Name Note: 1. Refer to the temperature rating chart if the ambient temper- 3 < mm 6 0.375 ature exceeds 25 C. A Anode 6 < mm 10 0.45 2. The pulse width is 10 s maximum with a frequency of 100 Hz. K Cathode 10 < mm 18 0.55 3. Complete soldering within 10 seconds. C Collector 18 < mm 30 0.65 E Emitter Ordering Information Description Model Photomicrosensor (reflective) EE-SF5 with soldering terminals Photomicrosensor (reflective) EE-SF5-B with PCB terminals Electrical and Optical Characteristics (Ta = 25 C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 A typ., 10 A max. V = 4 V R R Peak emission wavelength 940 nm typ. I = 20 mA P F Detector Light current I 200 A min., 2,000 A max. I = 20 mA, V = 10 V L F CE White paper with a reflection ratio of 90%, d = 5 mm (see note) Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I 2 A max. I = 20 mA, V = 10 V with no reflection LEAK F CE CollectorEmitter saturated voltage V --- --- CE (sat) Peak spectral sensitivity wavelength 850 nm typ. V = 10 V P CE Rising time tr 30 s typ. V = 5 V, R = 1 k , I = 1 mA CC L L Falling time tf 30 s typ. V = 5 V, R = 1 k , I = 1 mA CC L L Note: The letter d indicates the distance between the top surface of the sensor and the sensing object. Photomicrosensor (Reflective) EE-SF5(-B) 235 Engineering Data Forward Current vs. Collector Light Current vs. Forward Current Light Current vs. CollectorEmitter Dissipation Temperature Rating Characteristics (Typical) Voltage Characteristics (Typical) Ta = 25C d = 5 mm Ta = 25C Sensing object: I = 40 mA F V = 10 V CE White paper with d = 5 mm a reflection factor of 90% Sensing object: I = 30 mA F White paper with a reflection factor of 90% I = 20 mA F I = 10 mA F CollectorEmitter voltage V (V) Forward current I (mA) CE F Ambient temperature Ta (C) Relative Light Current vs. Dark Current vs. Ambient Response Time vs. Load Ambient Temperature Temperature Characteristics Resistance Characteristics Characteristics (Typical) (Typical) (Typical) V = 5 V CC I = 20 mA V = 10 V F CE Ta = 25C V = 5 V 0lx CE Ambient temperature Ta (C) Load resistance R (k) Ambient temperature Ta (C) L Sensing Distance Characteristics Sensing Position Characteristics Sensing Position Characteristics (Typical) (Typical) (Typical) Ta = 25C V = 10 V CE I = 20 mA F I = 20 mA F V = 5 V Sensing object: White paper CE V = 5 V CE Ta = 25C with a reflection factor of 90% Ta = 25C (a) : d = 3 mm d = 5 mm 1 1 (b) : d = 5 mm 1 Sensing Sensing object: White object: White paper with a reflection paper with a reflection factor of 90% Phototransistor side factor of 90% LED side d1 d1 = 5 mm Distance d (mm) Distance d (mm) 2 2 Distance d (mm) Sensing Angle Characteristics Sensing Angle Characteristics Response Time Measurement (Typical) (Typical) Circuit Input 90 % Output 10 % Input Sensing Ta = 25C Ta = 25C object I = 20 mA F I = 20 mA F V = 10 V CE V = 10 V Output CE d = 5 mm Sensing object: White paper Sensing object: White paper with a reflection factor of 90% with a reflection factor of 90% d = 5 mm Angle deviation () Angle deviation () 236 Photomicrosensor (Reflective) EE-SF5(-B) Relative light current I (%) Forward current I (mA) L F Light current I (A) Relative light current I (%) L L Collector dissipation P (mW) C Light current I (A) Relative light current I (%) L L Dark Current I (nA) D Relative light current I (%) L Light current I (mA) Response time tr, tf (s) L Relative light current I (%) L

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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