Product Information

PSMN2R8-40BS

PSMN2R8-40BS electronic component of NXP

Datasheet
MOSFET, N-CH, 40V, 100A, D2PAK
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.599 ea
Line Total: USD 1.6

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 1.599
25 : USD 1.521
100 : USD 1.209
250 : USD 1.0764
500 : USD 1.0374
2000 : USD 0.9984

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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Additional Infomation About Product

PSMN2R8-40BS N-channel 40 V 2.9 m standard level MOSFET in D2PAK Rev. 1 20 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --40 V DS j j 1 I drain current T =25C V =10V - - 100 A D mb GS see Figure 1 total power dissipation T = 25 C see Figure 2 --211 W P tot mb junction temperature -55 - 175 C T j Static characteristics drain-source on-state resistance V =10V I =10A T =100C - 3.58 4.2 m R DSon GS D j see Figure 13 see Figure 14 V =10V I =10A T =25C - 2.47 2.9 m GS D j see Figure 14 Dynamic characteristics Q gate-drain charge V =10V I =10A V =20V -17 -nC GD GS D DS see Figure 15 see Figure 16 Q total gate charge - 71 - nC G(tot) Avalanche ruggedness E non-repetitive drain-source V =10V T =25C - - 407 mJ DS(AL)S GS j(init) avalanche energy I =100 A V 40 V unclamped D sup R =50 GS 1 Continuous current rating is limited by package. D2PAKPSMN2R8-40BS NXP Semiconductors N-channel 40 V 2.9 m standard level MOSFET in D2PAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R8-40BS D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Marking Table 4. Marking codes Type number Marking code PSMN2R8-40BS PSMN2R8-40BS PSMN2R8-40BS All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 20 March 2012 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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