Product Information

PBSS4160PANPS

PBSS4160PANPS electronic component of NXP

Datasheet
TRANS, NPN/PNP, AEC-Q101, 60V, SOT1118D
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3969 ea
Line Total: USD 0.4

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - Warehouse 1


Ships to you between Tue. 07 May to Mon. 13 May

MOQ : 1
Multiples : 1
1 : USD 0.3969
10 : USD 0.3447
100 : USD 0.2608
250 : USD 0.2298
500 : USD 0.1943
1000 : USD 0.1799

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Collector Emitter Voltage V Br Ceo
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No Of Pins
Operating Temperature Max
Product Range
Automotive Qualification Standard
Msl
Svhc
LoadingGif

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Additional Infomation About Product

PBSS4160PANPS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 11 February 2015 Product data sheet 1. General description NPN/PNP low V Breakthrough In Small Signal (BISS) transistor in a leadless CEsat medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement: PBSS4160PANS. PNP/PNP complement: PBSS5160PAPS. 2. Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain h at high I FE C Reduced Printed-Circuit Board (PCB) requirements Exposed heat sink for excellent thermal and electrical conductivity High energy efficiency due to less heat generation Suitable for Automatic Optical Inspection (AOI) of solder joints AEC-Q101 qualified 3. Applications Load switch Battery-driven devices Power management Charging circuits LED lighting Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor for the PNP transistor with negative polarity V collector-emitter open base - - 60 V CEO voltage I collector current - - 1 A C I peak collector current single pulse t 1 ms - - 1.5 A CM p Scan or click this QR code to view the latest information for this productNXP Semiconductors PBSS4160PANPS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Symbol Parameter Conditions Min Typ Max Unit TR1 (NPN) R collector-emitter I = 0.5 A I = 50 mA pulsed - - 240 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb TR2 (PNP) R collector-emitter I = -0.5 A I = -50 mA pulsed - - 360 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol C1 B2 1 E1 emitter TR1 6 5 4 E2 2 B1 base TR1 TR2 7 8 3 C2 collector TR2 TR1 4 E2 emitter TR2 E1 B1 C2 1 2 3 5 B2 base TR2 sym139 Transparent top view 6 C1 collector TR1 DFN2020D-6 (SOT1118D) 7 C1 collector TR1 8 C2 collector TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4160PANPS DFN2020D-6 DFN2020D-6: plastic, thermally enhanced ultra thin and small SOT1118D outline package no leads 6 terminals body 2 x 2 x 0.65 mm 7. Marking Table 4. Marking codes Type number Marking code PBSS4160PANPS 3G PBSS4160PANPS All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 11 February 2015 2 / 23

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