Product Information

PBSS4130PANP

PBSS4130PANP electronic component of NXP

Datasheet
TRANS, NPN/PNP, 30V, 1A, DFN2020-6
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3916 ea
Line Total: USD 0.39

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 0.3916

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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Additional Infomation About Product

PBSS4130PANP 30 V, 1 A NPN/PNP low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1. General description NPN/PNP low V Breakthrough In Small Signal (BISS) transistor in a leadless CEsat medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4130PAN. PNP/PNP complement: PBSS5130PAP. 2. Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain h at high I FE C Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q101 qualified 3. Applications Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor for the PNP transistor with negative polarity V collector-emitter open base - - 30 V CEO voltage I collector current - - 1 A C I peak collector current single pulse t 1 ms - - 2 A CM p TR1 (NPN) R collector-emitter I = 1 A I = 0.1 A pulsed t 300 s - - 190 m CEsat C B p saturation resistance 0.02 T = 25 C amb Scan or click this QR code to view the latest information for this productNXP Semiconductors PBSS4130PANP 30 V, 1 A NPN/PNP low VCEsat (BISS) transistor Symbol Parameter Conditions Min Typ Max Unit TR2 (PNP) R collector-emitter I = -1 A I = -0.1 A pulsed - - 250 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E1 emitter TR1 6 5 4 C1 B2 E2 2 B1 base TR1 TR2 7 8 3 C2 collector TR2 TR1 4 E2 emitter TR2 E1 B1 C2 1 2 3 5 B2 base TR2 Transparent top view sym139 6 C1 collector TR1 DFN2020-6 (SOT1118) 7 C1 collector TR1 8 C2 collector TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4130PANP DFN2020-6 plastic thermal enhanced ultra thin small outline package no SOT1118 leads 6 terminals body 2 x 2 x 0.65 mm 7. Marking Table 4. Marking codes Type number Marking code PBSS4130PANP 2F 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor for the PNP transistor with negative polarity V collector-base voltage open emitter - 30 V CBO V collector-emitter voltage open base - 30 V CEO PBSS4130PANP All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved Product data sheet 12 December 2012 2 / 21

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